**FDD306P-VB Detailed parameter description: **.
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- **Brand:** VBsemi.
- **Model:** FDD306P-VB.
- **Silk screen: ** VBE2338.
- **Package:** TO252.
- **Type:** P-Channel channel MOSFET.
- **Voltage level:** -30V.
- **Current level:** -26A.
- **On-resistance (RDS(ON)):** 33mΩ @ VGS=10V, VGS=20V.
- **Gate-source voltage threshold ( Vth): ** -1.3V.
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**Application introduction:**.
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FDD306P-VB is a P-Channel channel MOSFET in TO252 package. With negative voltage (-30V) and high current capacity (-26A), it is suitable for high-performance electronic modules requiring P-Channel MOSFETs. .
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**Application fields:**.
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1. **Power module:** Used in flyback power supplies and voltage regulators to provide high-efficiency power conversion. .
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2. **Motor control:** As part of the motor driver, it realizes effective control of the motor. .
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3. **Switching circuit:** Used in various switching circuits, such as switching power supplies and inverters. .
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**Function:**.
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- Provide high-efficiency power conversion. .
- Achieve effective control of the motor. .
- Used in various switching circuits, supporting switching power supplies and inverters. .
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**Usage Precautions:**.
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1. **Voltage and current limits:** Do not exceed the specified voltage and current limits to avoid damaging the device. .
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2. **Heat dissipation:** In high-power applications, appropriate heat dissipation measures are required to ensure that the device is within the normal operating temperature range. .
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3. **Anti-static measures:** Take anti-static measures during handling and installation to prevent damage to the device caused by electrostatic discharge. .
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The above is a brief description, the specific design and application need to be carried out according to the specific module and circuit requirements.