Model: FDC6401N-VB.
Silkscreen: VB3222.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Rated voltage: 20V.
- Maximum current: 4.8A.
- Static on-resistance (RDS(ON)): 22mΩ @ 4.5V.
- Static on-resistance (RDS(ON)): 28mΩ @ 2.5V.
- Gate-source voltage (Vgs): ±12V.
- Threshold voltage (Vth): 1.2V to 2.2V.
- Package: SOT23-6.
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Application Introduction:.
The FDC6401N-VB is an N-channel field effect transistor (FET) with two N-channel transistors integrated in one package, suitable for a variety of electronic devices and applications, with the following main applications: .
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1. **Power switch:** The FDC6401N-VB can be used as a power switch to control the flow of current in a circuit. Its dual N-channel design is suitable for various switching applications. .
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2. **Electronic switch:** Suitable for various electronic switching applications such as switching power supplies, power distribution units, power management modules, etc. .
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3. **Current control:** Can be used in current control circuits such as current limiters and current sources. .
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4. **Power management:** In power management modules, the FDC6401N-VB can help control the switching of power supplies and stabilize the output voltage. .
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5. **Load switching:** Can be used in load switchers to help control the connection and disconnection of loads. .
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6. **Battery protection:** In lithium battery protection circuits, FDC6401N-VB can be used to implement battery charge and discharge control to ensure safe operation of the battery. .
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These application areas cover a variety of electronic devices and modules. The dual N-channel design of FDC6401N-VB makes it an important component for controlling current and voltage, especially in power management and current control. Its high performance and integrated design help simplify circuit design and reduce package size.