Detailed parameter description: .
- Model: FDC6312P-VB.
- Silk screen: VB4290.
- Brand: VBsemi.
- Parameters: .
- 2 P channel channels.
- Operating voltage: -20V.
- Operating current: -4A.
- On-resistance: 75mΩ @ 4.5V, 100mΩ @ 2.5V.
- Gate-source voltage range: 12Vgs (±V ).
- Threshold voltage range: -1.2 ~ -2.2Vth(V).
- Package: SOT23-6.
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Application introduction: .
This FDC6312P-VB model The transistor is suitable for occasions requiring P-channel and can be used in various applications that require control of current and voltage. Its main application areas include but are not limited to the following aspects: .
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1. Power management module: FDC6312P-VB transistor can be used in equipment power management module, mainly used to control power switch and stabilize output voltage. By controlling the gate-source voltage and threshold voltage, the power switch can be controlled and the output voltage can be adjusted. .
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2. Motor drive module: FDC6312P-VB transistor has low on-resistance and high operating current capability, and is suitable for various occasions that require efficient and stable driving of motors. It can be used as motor drive modules in power tools, car electric seats, model aircraft, drones and other applications. .
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3. Battery management module: FDC6312P-VB transistor can be used in the battery charge and discharge management module to protect the battery charging and discharging process by controlling the current and voltage. At the same time, its small size package can meet the volume requirements of the battery management module. .
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4. Other modules: FDC6312P-VB transistor can also be used in other modules that need to control current and voltage, such as LED lighting modules, switch control modules of electronic equipment, etc. .
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In short, the FDC6312P-VB transistor is suitable for various applications that require P-channel control current and voltage, and is widely used in power management modules, motor drive modules, battery management modules and other field modules.
Channel, 150V, 5.4A, RDS(ON), 80mΩ@10V, 85mΩ@4.5V, 20Vgs(±V); 2Vth(V); SOP8.
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Detailed parameter description: .
- Channel type: N-channel.
- Maximum voltage: 150V.
- Maximum current: 5.4A.
- On-state resistance: 80mΩ @ 10V; 85mΩ @ 4.5V.
- Gate Source voltage: 20Vgs (±V).
- Gate threshold voltage: 2Vth (V).
- Package type: SOP8.
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Application introduction: .
SI4848DY-T1-E3 -VB is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) suitable for power switching applications in a variety of electronic devices and circuits. The device has low on-state resistance, providing low voltage drop at lower voltages, lower losses and high efficiency. .
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This product can be widely used in modules in the following fields: .
1. Power module: Since SI4848DY-T1-E3-VB has high current carrying capacity and low voltage drop characteristics, it is suitable for power supply Switching circuits and power switches in modules. .
2. Motor control module: This device can provide high power output and low energy consumption, and is suitable for switching circuits in motor control modules, such as DC motor drivers and stepper motor controllers. .
3. Lighting module: SI4848DY-T1-E3-VB can be used as a switching circuit in the lighting module to realize the switching and brightness control of the light. .
4. Power inverter: This product can be used in the switching circuit in the inverter module to convert DC power into AC power, such as solar inverters and electric vehicle drives. .
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In short, SI4848DY-T1-E3-VB is suitable for various electronic devices and modules that require power switch control, such as power modules, motor control modules, lighting modules and power inverters. It is characterized by low on-state resistance, high current carrying capacity and low voltage drop, and can provide high efficiency and low energy consumption power switching solutions.