Detailed parameter description of FDC5661N:.
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- Polarity: N-channel.
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- Rated voltage: 60V.
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- Rated current: 7A.
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- On-resistance: 30mΩ @ 10V, 35mΩ @ 4.5V.
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- Gate-source voltage: 20Vgs (±V).
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- Threshold voltage: 1~3Vth (V).
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- Package type: SOT23-6.
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Application introduction:.
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FDC5661N is an N-channel MOSFET with high rated voltage and rated current, suitable for use in various power management and power amplifier applications. Its low on-resistance and high performance make it excel in high-load and high-frequency applications, providing reliable and efficient current switching functions. .
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The device has a threshold voltage range of 1~3Vth, and can control the gate-source voltage of 20Vgs (±V) to turn on and off the switch tube, realize current control and switch state conversion. Its low on-resistance can reduce power loss and improve system efficiency. .
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FDC5661N adopts SOT23-6 package, which is small and suitable for use in application scenarios with limited space. .
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The device is widely used in power switches, power inverters, motor drivers, LED lighting circuits and other fields. With its low on-resistance and high performance, it can provide efficient and reliable power switch control. Its small package makes it particularly suitable for application in compact circuit boards and modules. .
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In short, FDC5661N is a high-performance N-channel MOSFET suitable for various application modules of power management and power amplifiers, especially in the fields of power switches, motor drivers and LED lighting circuits. .