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F3205S-VB, a N-channel TO263 MOSFET datasheet parameters video explanation
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Model: F3205S-VB.
Silk screen: VBL1606.
Brand: VBsemi.
Parameter description: .
- Channel type: N channel.
- Rated voltage: 60V.
- Maximum current: 150A.
- Static drain-source resistance (RDS(ON)): 4mΩ@10V.
- Gate-source voltage (±Vgs): 20V.
- Gate source Extreme threshold voltage (Vth): 3V.
- Package type: TO263.
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Application introduction: .
F3205S-VB is a high-performance N-channel metal oxide semiconductor field effect transistor (MOSFET) with high voltage handling and high current handling, as well as extremely low drain-source resistance. These characteristics make it widely used in modules in the electronic field that require high current handling and low resistance. .
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Application fields: .
1. Power module: F3205S-VB can be used in high-power power switch modules to provide power conversion and voltage regulation functions. Suitable for various electronic equipment, communication equipment and industrial equipment. .
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2. Motor drive: In the motor control module, it can be used in motor drive circuits, providing high current carrying capacity and low loss, suitable for electric vehicles, robots and industrial automation. .
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3. Power inverter: It can also be used in inverter circuits to convert DC power to AC power, suitable for solar inverters, electric vehicle inverters and UPS systems. .
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4. High current switch: F3205S-VB can be used in high current switch modules, such as power distribution, current protection and switch control. .
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In short, F3205S-VB is a high-performance N-channel MOSFET, suitable for high-power electronic modules in many fields, providing power management, motor control, signal amplification and inverter functions.

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