Model: DMP2240UW-7-VB.
Silk screen: VBK2298.
Brand: VBsemi.
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Parameter description: .
- **P channel:** This device is a P-channel MOSFET, current flows in the P-channel and is usually used in different types of applications like power switches etc. .
- **Operating voltage (VDS): ** -20V, indicating the upper limit of the withstand voltage of the MOSFET. Negative values indicate that the device is P-channel. .
- **Continuous current (ID):** -3A, indicating the maximum current that the MOSFET can withstand. Negative values indicate that the current direction is opposite to that of the N-channel MOSFET. .
- **On-resistance (RDS(ON)):** 98mΩ @ 4.5V, 117.6mΩ @ 2.5V, 12Vgs (±V), indicating the resistance of the MOSFET in the on-state, these two values Correspond to different gate voltages respectively. .
- **Threshold voltage (Vth): ** -0.6~-2V, indicating the gate voltage range required for the MOSFET to enter the conductive state. Negative values indicate opposite voltage polarity. .
- **Package:** SC70-3, this is a small surface mount package. .
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Application Introduction: .
This P-channel MOSFET is suitable for a variety of low-power electronic applications, including but not limited to: .
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1. **Power switch: ** For use in low power power switching circuits such as small DC-DC converters and power management units. .
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2. **Battery Protection:** Used in small battery protection circuits to control battery charging and discharging to prevent overcurrent and overvoltage. .
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3. **Signal switch:** Used for small signal switching circuits, such as signal amplifiers, audio amplifiers and small sensor interfaces. .
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4. **LED Driver:** Used in low-power LED lighting applications to achieve efficient LED lighting control. .
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5. **Portable Devices:** Used for power management and signal switching in small portable electronic devices, such as smart watches, headphones and sensor modules. .
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This P-channel MOSFET is suitable for electronic circuits that require low-power P-channel devices, providing reliable current control and switching performance, and is usually used in low-power electronic fields to improve efficiency and performance.