Model: DMG2301U-7-VB.
Silk screen: VB2290.
Brand: VBsemi.
Parameter description: .
- Polarity: P channel.
- Rated voltage: -20V.
- Maximum continuous drain current: -4A.
- Static drain-source resistance (RDS(ON)): 57mΩ @ 4.5V, 83mΩ @ 2.5V.
- Gate-source Voltage (Vgs): 12V (±V).
- Turn-on voltage (gate threshold voltage): -0.81V.
- Package: SOT23.
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Application introduction: .
The DMG2301U-7-VB is a P-channel field-effect transistor (MOSFET) device with moderate current handling and low drain-source resistance suitable for a variety of electronic applications. .
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Application fields: .
1. **Power module**: DMG2301U-7-VB is suitable for switching power supplies, power management modules and battery protection circuits, helping to improve power conversion efficiency. Especially suitable for low voltage power management. .
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2. **Battery Management**: In portable equipment, power tools and embedded systems, DMG2301U-7-VB can be used for battery protection and management to ensure safe charging, discharging and protection of batteries. .
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3. **Signal switch**: This MOSFET device can be used in signal switches, analog switches and low-power circuits to control circuit switching and signal transmission. .
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4. **Portable Devices**: DMG2301U-7-VB can be used for power management, signal switching and battery protection of portable devices, such as smartphones, tablets and portable electronic devices. .
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5. **Low Power Electronics**: Due to its low drain-source resistance and low gate threshold voltage, this MOSFET device can be used in low power electronic applications such as sensor interfaces , small controllers and embedded systems. .
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In short, DMG2301U-7-VB is a versatile electronic device suitable for various electronic applications requiring moderate current carrying capacity, low resistance and reliability. It can be used in modules such as power management, battery protection, signal switches, portable devices and low-power electronics.