Model: CMD12N10.
Silk screen: VBE1101M.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Rated voltage: 100V.
- Rated current: 18A.
- RDS(ON): 115mΩ @ 10V, 121mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Gate-source threshold voltage: 1.6V.
- Package type: TO252.
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Application Introduction:.
CMD12N10 (silk screen: VBE1101M) is an N-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction: .
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Detailed parameter description: .
CMD12N10 is an N-channel power MOSFET with high voltage and current carrying capacity. The main parameters include rated voltage of 100V, rated current of 18A, RDS(ON) of 115mΩ @ 10V, 121mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage of 1.6V, and package type of TO252. .
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Application field: .
CMD12N10 (VBE1101M) is suitable for a variety of fields and application scenarios, mainly used in circuits that require high voltage and high current carrying capacity of N-channel power MOSFET. The following are some typical application fields: .
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1. Power management module: CMD12N10 can be used in power management modules to provide efficient power conversion and stable current output, and improve the power consumption and efficiency of the system. .
2. Motor drive: It can be used in motor drive circuits to provide high power and high efficiency power output, suitable for motor drive in industrial automation and mechanical equipment. .
3. Automotive electronic systems: CMD12N10 is suitable for power management, motor drive and lighting control in automotive electronic systems, meeting the requirements of automotive electronic systems for high voltage and high power. .
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In summary, CMD12N10 (VBE1101M) is an N-channel power MOSFET suitable for modules in the fields of power management modules, motor drives and automotive electronic systems. It has high voltage and current carrying capacity, suitable for circuits that require high power and high efficiency.