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CES2305-VB, a P-channel SOT23-3 MOSFET datasheet parameters video explanation
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Model: CES2305-VB.
Silk screen: VB2290.
Brand: VBsemi.
Parameters: .
- Package type: SOT23.
- Channel type: P—Channel.
- Maximum drain voltage (Vds): -20V.
- Maximum drain current (Id): -4A.
- Static drain-source resistance (RDS(ON)): 57mΩ @ VGS=4.5V , VGS=12V.
- Threshold voltage (Vth): -0.81V.
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Package: SOT23.
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Application introduction: .
CES2305-VB is a P-Channel MOSFET is suitable for a variety of circuit and module designs, especially in low-power and miniaturized applications that require P-Channel MOSFET. .
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Field module application: .
1. **Power management module:** Suitable for power management circuits, such as low-power switching power supplies, portable power supplies, etc., to achieve efficient power conversion and Energy management. .
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2. **Battery protection module:** Used for battery charge and discharge management circuit to provide efficient battery management and protection functions. .
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3. **Signal switch module:** In some circuit designs that require analog switching functions, such as signal switches, analog switching power supplies, etc. .
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4. **Miniaturized equipment:** Due to its small package and low power consumption, it is suitable for the design of miniaturized equipment, such as portable electronic devices, sensor nodes, etc. .
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5. **Analog circuit:** In some analog circuits that require P-Channel MOSFET, CES2305-VB can be used to achieve high-performance analog signal processing. .
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Please note that the above are some typical application scenarios. Actual use requires selection and design based on specific circuit and system requirements. When integrating the CES2305-VB, it is recommended to carefully read its data sheet for detailed electrical characteristics and operating information.

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