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CEM4953-VB, a 2个P-channel SOP8 MOSFET datasheet parameters video explanation
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Model: CEM4953-VB.
Silk screen: VBA4338.
Brand: VBsemi.
Parameter description: .
- MOSFET type: 2 P channels.
- Rated voltage: -30V.
- Maximum current: -7A.
- On-resistance (RDS(ON)): 35mΩ @ 10V, 48mΩ @ 4.5V, 20Vgs.
- Threshold voltage (Vth): -1.5V.
- Package: SOP8.
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Application introduction: .
CEM4953-VB is a device containing two P-channel MOSFETs. It is suitable for a variety of electronic equipment and circuits, especially suitable for Applications requiring power switching, power management and current control. .
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**Application areas and module description:**.
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1. **Power switch module**:.
- Due to its two P-channel MOSFETs Features, CEM4953-VB is suitable for power switch modules and can be used to control high voltage and high current loads. .
- Widely used in power switches, power inverters, and high-power switching circuits. .
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2. **Power Management Module**: .
- This device can be used in the power management module to realize power control and management of the circuit. .
- Used for efficient energy management in power supply modules, battery charge and discharge management, and DC-DC converters. .
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3. **Current Control Module**: .
- The characteristics of CEM4953-VB make it suitable for current control applications and can be used to adjust and limit the current flow. .
- Used for precise current control in constant current sources, current regulation circuits, and current control switches. .
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4. **Power Inverter Module**: .
- This device can be used in power inverter module to convert DC power into AC power. .
- Used for power inversion and control in solar inverters, variable frequency air conditioners, and power electronic equipment. .
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In summary, CEM4953-VB is a dual P-channel MOSFET device suitable for use in a variety of high-power, high-voltage electronic equipment and circuits. Its properties make it a key component in power switching, power management, current control and power inverter modules, helping to achieve reliability and efficiency in high-power circuits.

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