Model: CEM4435. Silk screen: VBA2317. Brand: VBsemi. Parameters: . - Channel type: P channel. - Rated voltage: -30V. - Rated Current: -7A. - RDS(ON): 23mΩ @ 10V, 29mΩ @ 4.5V, 66mΩ @ 2.5V. - Gate-source voltage range: ±20V. - Gate-source threshold voltage: - 1.37V. - Package type: SOP8. . Application introduction: . CEM4435 (silk screen: VBA2317) is a P-channel power MOSFET produced by VBsemi Company. The following is a detailed parameter description and application introduction: . . Detailed parameter description: . CEM4435 is a P-channel power MOSFET with low conductance resistance and high current carrying capacity. The main parameters include rated voltage of -30V, rated current of -7A, RDS(ON) of 23mΩ @ 10V, 29mΩ @ 4.5V, 66mΩ @ 2.5V, gate-source voltage range of ±20V, gate-source threshold voltage of -1.37V , the packaging type is SOP8. . . Application fields: . CEM4435 (VBA2317) is suitable for a variety of fields and application scenarios, mainly used in circuits that require P-channel power MOSFET. The following are some typical application areas: . . 1. Power management module: CEM4435 can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system. . 2. Power tools and household appliances: It can be used in motor drive circuits in power tools and household appliances to provide high-power and high-efficiency power output. . 3. Battery charge and discharge control: CEM4435 is suitable for battery charge and discharge control circuits, providing high-efficiency and reliable charge and discharge control. . 4. Automotive electronic systems: CEM4435 can be used in power management, motor drive and lighting control in automotive electronic systems to meet the high power and high performance requirements of automotive electronic systems. . . In summary, CEM4435 (VBA2317) is a P-channel power MOSFET, suitable for modules in power management modules, power tools, battery charge and discharge control and automotive electronic systems. It has low conductance resistance and high current carrying capacity, making it suitable for circuits requiring high power and efficiency.
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