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CEB50P03-VB, a P-channel TO263 MOSFET datasheet parameters video explanation
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Model: CEB50P03-VB.
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Silk screen: VBL2309.
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Brand: VBsemi.
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Parameters:.
- Package: TO263.
- Channel type: P-Channel.
- Maximum voltage (Vds): -30V.
- Maximum current (Id): -75A.
- On-resistance (RDS(ON)): 8mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): -2V.
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Application Introduction:.
CEB50P03-VB is a P-Channel MOSFET in TO263 package with maximum voltage -30V, maximum current -75A, and low on-resistance. Its on-resistance is 8mΩ at VGS of 10V and 20V respectively. This device is suitable for high current applications where a P-Channel MOSFET is required. .
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Applications:.
This device may be widely used in a variety of electronic applications, including but not limited to:.
- Power switch.
- Motor drive.
- Power inverter.
- Power management.
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Function:.
On these modules, CEB50P03-VB can be used as a power switch to help achieve efficient power conversion and power management. It can act as a switch in the circuit to control the on and off of current, thereby regulating the power output. .
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Precautions for use:.
When using CEB50P03-VB, please pay attention to the following:.
1. Please ensure that it is used within the specified voltage and current range to avoid damage to the device. .
2. Follow the operating conditions and limitations in the data sheet provided by the manufacturer. .
3. Proper heat dissipation is important, especially in high current applications, to ensure that the device maintains the appropriate temperature during operation. .
4. Pay attention to the threshold voltage to ensure operation within the appropriate voltage range. .
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The above information is for reference only, and specific applications and precautions may need to be adjusted according to specific circuit design and application requirements.

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