Model: BUK662R7-55C-VB.
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Silk screen: VBL1603.
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Brand: VBsemi.
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Parameters: .
- Package type: TO263.
- Channel type: N-Channel.
- Rated voltage: 60V.
- Maximum current: 210A.
- On-state resistance: RDS(ON) = 3.2mΩ @ VGS=10V, VGS =20V.
- Threshold voltage: Vth = 2.9V.
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Package: TO263.
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**Detailed parameter description:**.
1. **Package Type (Package Type):** TO263, indicating that the device uses TO263 package. .
2. **Channel Type:** N-Channel, indicating that this is an N-channel MOSFET. .
3. **Rated Voltage:** 60V, indicating the maximum voltage at which the device can operate normally. .
4. **Maximum Current:** 210A, indicating the maximum current that the device can withstand. .
5. **On-State Resistance:** RDS(ON) = 3.2mΩ @ VGS=10V, VGS=20V, indicating the resistance in the open state under a specific gate-source voltage . .
6. **Threshold Voltage:** Vth = 2.9V, which represents the voltage required for the device to switch from the off state to the on state under the action of the gate-source voltage. .
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**Application Introduction:**.
BUK662R7-55C-VB is a high-power N-Channel MOSFET, suitable for a variety of high-current applications, including but not limited to:.
1. **Power Switch:** Due to its high current carrying capacity, it can be used in high-power power switches and power inverters. .
2. **Motor drive:** Suitable for drive circuits of high-power DC motors and industrial motors, providing efficient current control. .
3. **Power Inverter:** Used in high-power solar inverters and other power inverters to provide efficient energy conversion. .
4. **Industrial Automation:** Suitable for power switch modules in industrial automation systems that require high power and high current. .
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Please note that the data sheet and application manual of the device should be carefully referenced in specific designs to ensure correct use and performance.