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BSS123Q-7-VB, a N-channel SOT23-3 MOSFET datasheet parameters video explanation
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Model: BSS123Q-7-VB.
Screen printing: VB1106K.
Brand: VBsemi.
Package: SOT23.
Channel type: N—Channel.
Maximum voltage (VDS): 100V .
Maximum current (ID): 0.17A.
On-resistance (RDS(ON)): 2800mΩ @ VGS=10V, VGS=20V.
Gate threshold voltage (Vth): 1.28V.
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**Detailed parameter description:**.
1. **Channel type:** N—Channel, indicating that this is an N-channel MOSFET. .
2. **Maximum voltage (VDS):** 100V, indicating the maximum drain-source voltage that the device can withstand. .
3. **Maximum current (ID):** 0.17A, indicating the maximum drain current that the device can withstand. .
4. **On-resistance (RDS(ON)):** 2800mΩ @ VGS=10V, VGS=20V, this is the drain-source resistance in the on-state at different gate voltages . .
5. **Gate threshold voltage (Vth):** 1.28V, which is the minimum gate voltage required to put the device into a conductive state. .
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**Application Introduction:**.
BSS123Q-7-VB is an N-channel field effect transistor (MOSFET) commonly used in low-power, small-signal amplification and switching power supply applications . Due to its small size and low power consumption, it is suitable for electronic devices that require compactness, lightweight and low power consumption. .
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**Application fields:**.
1. **Signal switch:** Used for small signal switching, such as signal switching in audio amplifiers. .
2. **Low-power electronic devices:** Suitable for portable electronic devices, such as mobile phones and tablets, to achieve low-power operation. .
3. **Power switch:** Used in low-power switching power supply, such as small battery-powered equipment. .
4. **Analog circuit:** Used for signal conditioning and switching functions in analog circuits. .
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**Usage Precautions:**.
1. **Maximum Ratings:** Do not exceed the maximum current and voltage values specified in the device specifications. .
2. **Electrostatic protection:** When handling and installing devices, please take electrostatic protection measures to prevent damage to the device caused by electrostatic discharge. .
3. **Application circuit design:** When designing the circuit, please refer to the data sheet and application notes provided by the manufacturer to ensure the correct power supply and control circuit. .
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Please note that the above information is general advice based on the parameters provided and general experience. For practical applications, always refer to the specific data sheets and application guides provided by the manufacturer.

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