Model: B09N03A.
Silk screen: VBE1307.
Brand: VBsemi.
Parameters: .
- Channel type: N channel.
- Rated voltage: 30V.
- Rated current : 60A.
- RDS(ON): 10mΩ @ 10V, 11mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Gate-source threshold voltage: 1.6V.
- Package Type: TO252.
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Application introduction: .
B09N03A (silk screen: VBE1307) is an N-channel power MOSFET produced by VBsemi Company. The following is a detailed parameter description and application introduction: .
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Detailed parameter description: .
B09N03A is an N-channel power MOSFET with high current carrying capacity and low on-resistance. The main parameters include rated voltage of 30V, rated current of 60A, RDS(ON) of 10mΩ @ 10V, 11mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage of 1.6V, and package type TO252. .
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Application fields: .
B09N03A (VBE1307) is suitable for a variety of fields and application scenarios, mainly used in circuits that require high current carrying capacity and low on-resistance. The following are some typical application areas: .
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1. Power management module: B09N03A can be used in the power management module to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system. .
2. Motor drive: It can be used in motor drive circuits to provide high-power and high-efficiency power output, and is suitable for motor drives in industrial automation and mechanical equipment. .
3. Electric vehicles: B09N03A is suitable for power management and motor drive in electric vehicles, meeting the requirements of electric vehicles for high current and high power. .
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In summary, B09N03A (VBE1307) is an N-channel power MOSFET, suitable for modules in power management modules, motor drives and electric vehicles. It has high current carrying capacity and low on-resistance, making it suitable for circuits requiring high power and efficiency.