Model: AP9575AGH-VB. Silk screen: VBE2610N. Brand: VBsemi. Parameters: . - P channel. - Maximum withstand voltage: -60V. - Max. Leakage current: -38A. - Static on-resistance (RDS(ON)): 61mΩ @ 10V, 72mΩ @ 4.5V, 20Vgs (±V). - Threshold voltage (Vth): -1.3V. - Package: TO252. . Application Introduction: . AP9575AGH-VB is a P-channel field effect transistor suitable for a variety of electronic applications. Its low on-resistance and withstand voltage characteristics make it ideal for use in power control and switching circuits. The device excels in applications responsible for power management and power amplification. . . Field module application: . 1. Power management module: AP9575AGH-VB can be used in power management modules such as switching power supplies and voltage regulators to provide efficient power control. . 2. Power amplification module: It can also be used to amplify signal modules, such as audio amplifiers, to enhance the amplification effect of audio signals. . 3. Switching circuit: Due to its P-channel characteristics, it is suitable for various switching circuits, such as switch mode power supplies and electronic switches. . . These features and applications make AP9575AGH-VB widely used in the electronics industry.
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