Model: AP40P03GH-VB.
Silk screen: VBE2317.
Brand: VBsemi.
Parameter description: .
- Polarity: P channel.
- Rated voltage: -30V.
- Maximum continuous drain current: -40A.
- Static drain-source resistance (RDS(ON)): 18mΩ @ 10V, 25mΩ @ 4.5V.
- Gate-source voltage (Vgs ): 20V (±V).
- Turn-on voltage (gate threshold voltage): -1.7V.
- Package: TO252.
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Application introduction: .
AP40P03GH-VB It is a P-channel field-effect transistor (MOSFET) device with high current handling capability and low drain-source resistance. This makes it useful in a variety of high-performance electronics applications. .
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Application fields: .
1. **Power module**: Since AP40P03GH-VB has low drain-source resistance, it is suitable for switching power supplies, power management modules and battery protection circuits , helping to improve power conversion efficiency. .
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2. **Motor Drive**: The high current handling capability of this MOSFET device makes it ideal for use in motor drives, motor control and motor protection, and can be used in a variety of motor applications. .
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3. **Battery Management**: In electric vehicles, power tools and portable equipment, AP40P03GH-VB can be used in battery management systems to ensure safe charging, discharging and protection of batteries. .
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4. **High-frequency switching circuit**: Due to its low resistance and high performance, this MOSFET is suitable for high-frequency switching circuits, such as DC-DC converters, power inverters, etc. .
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5. **LED Driver**: AP40P03GH-VB can be used for LED driver and lighting control to provide efficient LED lighting. .
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In short, AP40P03GH-VB is a versatile electronic device suitable for various electronic applications that require high current, low resistance, high efficiency and reliability. It can be used in power management, motor control, battery protection, high-frequency switching circuits, LED lighting and other modules.