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AP2303GN-VB, a P-channel SOT23-3 MOSFET datasheet parameters video explanation
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Model: AP2303GN.
Silkscreen: VB2355.
Brand: VBsemi.
Parameters:.
- Channel type: P-channel.
- Rated voltage: -30V.
- Rated current: -5.6A.
- RDS(ON): 47mΩ @ 10V, 56mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Gate-source threshold voltage: -1V.
- Package type: SOT23.
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Application introduction:.
AP2303GN (silkscreen: VB2355) is a P-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction:.
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Detailed parameter description:.
AP2303GN is a P-channel power MOSFET with low conductance voltage drop and high current carrying capability. The main parameters include rated voltage of -30V, rated current of -5.6A, RDS(ON) of 47mΩ @ 10V, 56mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage of -1V, and package type of SOT23. .
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Application fields: .
AP2303GN (VB2355) is suitable for a variety of fields and application scenarios, mainly used in circuits requiring P-channel power MOSFETs. The following are some typical application fields: .
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1. Power management module: AP2303GN can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system. .
2. Power tools and household appliances: It can be applied to motor drive circuits in power tools and household appliances to provide efficient and reliable power output. .
3. Battery management system: AP2303GN can be used in the charge and discharge control circuit in the battery management system to provide efficient and reliable battery management. .
4. LED lighting: In LED lighting systems, AP2303GN can be used as a switching element in the drive circuit to achieve efficient power conversion and precise control of LED lights. .
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In summary, AP2303GN (VB2355) is a P-channel power MOSFET suitable for power management modules, power tools, household appliances, battery management systems and LED lighting modules. It has low conductance voltage drop and high current carrying capacity, suitable for circuits requiring high performance and reliability.

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