Model: AO6602-VB.
Silk screen: VB5222.
Brand: VBsemi.
Parameters:.
- N+P channel.
- Rated voltage: ±20V.
- Maximum current: 7A (forward) / 4.5A (reverse).
- On-state resistance (RDS(ON)): 20mΩ @ 4.5V (forward) / 70mΩ @ 2.5V (reverse).
- Threshold voltage (Vth): 0.71V (forward) / -0.81V (reverse).
- Package: SOT23-6.
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Application Introduction:.
AO6602-VB is an N+P channel MOSFET with a dual-channel design suitable for a variety of applications including power switching, current control and power management. .
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Main features and application areas: .
1. **Power switch**: AO6602-VB can be used in power switching applications such as switching power supplies, DC-DC converters and switching regulators. Its dual-channel design allows simultaneous control of forward and reverse currents. .
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2. **Power management**: In power management systems, this MOSFET can be used for power switching and control to help achieve efficient energy management. .
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3. **Current control**: AO6602-VB is suitable for current control applications, including current sources, current controllers and current amplifiers. It allows regulation and control of forward and reverse currents. .
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4. **Battery protection**: In battery-powered systems, AO6602-VB can be used in battery protection circuits to ensure safety and stability during battery charging and discharging. .
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5. **Current switch**: This MOSFET can be used in current switching applications such as current limiting and protection circuits. .
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In short, AO6602-VB is suitable for multiple fields, including power switching, power management, current control, battery protection and current switch modules. Its dual-channel design and the characteristics suitable for both forward and reverse current make it an ideal choice for a variety of circuit designs.