Model: AM4392N-T1-PF-VB . Silk screen: VBA1203M . Brand: VBsemi . . Detailed parameter description: . - Channel type: N channel. - Rated voltage: 200V. - Rated current: 3A. - On-state resistance: 300mΩ@10V, 360mΩ@4.5V. - Gate-source voltage range: 20Vgs(±V). - Threshold voltage range: 2~4Vth(V). - Package type: SOP8. . Application introduction: . This model of AM4392N-T1-PF-VB MOSFET is suitable for various The circuit design in this field module has the following characteristics: . . 1. The N-channel type makes it suitable for the circuit design required for N-channel field effect transistors. . 2. High rated voltage and current make it suitable for high voltage and high current application scenarios. . 3. Low RDS(ON) value (300mΩ and 360mΩ) can achieve low on-resistance to reduce power consumption and improve efficiency. . 4. The wide gate-source voltage range (20Vgs) and gate threshold voltage range (2~4Vth(V)) enable it to adapt to different driving circuit needs. . 5. SOP8 package provides convenient installation and heat dissipation performance. . . These products are mainly used in modules in the following fields: . . 1. Power module: Due to high rated voltage and current and low on-resistance, AM4392N-T1-PF-VB Can be used in power modules to effectively control current and improve power efficiency. . 2. Power tools: The high rated current makes it suitable for motor drives in power tools. . 3. Industrial automation: Due to its ability to withstand high voltage and high current, AM4392N-T1-PF-VB can be used for various circuit design needs in industrial automation systems. . 4. Automotive electronics: Suitable for various module designs in automotive electronic systems, such as electric vehicle controllers. . 5. LED lighting: Can be used in LED lighting modules to achieve efficient current drive and precise brightness control. . . In short, AM4392N-T1-PF-VB is an N-channel MOSFET, suitable for circuit design in modules in various fields, with high rated voltage and current, low on-resistance and a wide range of advantages such as gate-source voltage and threshold voltage range. .
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