Model: 60T03H-VB.
Silk screen: VBE1307.
Brand: VBsemi.
Parameter description: .
- Channel type: N channel.
- Rated voltage: 30V.
- Maximum current: 60A.
- Static drain-source resistance (RDS(ON)): 10mΩ@10V, 11mΩ@4.5V.
- Gate-source threshold voltage (Vth): 1.6V.
- Gate-source voltage (±Vgs): 20V.
- Package type: TO252.
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Application introduction: .
60T03H-VB is an N-channel metal oxide Semiconductor field effect transistor (MOSFET) with high current handling capability and low drain-source resistance. These characteristics make it widely used in modules in various electronic fields. .
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Application fields: .
1. Power module: 60T03H-VB can be used in power switch modules to provide efficient power conversion and voltage regulation, suitable for various electronic equipment and power systems. .
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2. Motor drive: In the motor control module, it can be used in motor drive circuits, providing high current capability and low loss, suitable for electric vehicles, robots and industrial automation. .
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3. Battery protection: 60T03H-VB can be used in battery protection circuits to ensure efficiency and safety during charging and discharging. It is suitable for portable electronic devices and battery management systems. .
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4. Lighting application: It can also be used in LED lighting drive circuits to provide efficient brightness control and energy management, suitable for indoor and outdoor lighting systems. .
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In short, 60T03H-VB is a high-performance MOSFET suitable for electronic modules in many fields, providing efficient energy management and current control.