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50N03-TO251-VB, a N-channel TO251 MOSFET datasheet parameters video explanation
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**VBsemi 50N03-TO251-VB product detailed parameter description and application introduction**.
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**Parameter description:**.
- **Model:** 50N03-TO251-VB.
- **Silk screen:** VBFB1311.
- **Brand:** VBsemi.
- **Package:** TO251.
- **Channel type:** N—Channel.
- **Operating voltage:** 30V.
- **Maximum current:** 70A.
- **On-resistance:** RDS(ON)=6mΩ@VGS=10V, VGS=20V.
- **Threshold voltage:** Vth=1.92V.
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**Application introduction:**.
VBsemi's 50N03-TO251-VB is an N-channel field effect transistor in a TO251 package, suitable for a variety of high current application scenarios. The device is widely used in the field of power electronics to provide efficient and reliable current control. .
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**Main application areas and modules:**.
1. **Power module:** 50N03-TO251-VB can be used in power modules as a power switch or power adjustment device to provide stable power output. .
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2. **Motor drive module:** Due to the device's high current carrying capacity, it is suitable for motor drive modules and can provide reliable current support in motor control. .
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3. **Power inverter:** In the power inverter, 50N03-TO251-VB can be used to achieve DC to AC conversion and is a key component in the inverter circuit. .
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**Function:**.
- **Current control:** 50N03-TO251-VB can be used as a key component for current control, and the current in the circuit can be controlled by adjusting its on-resistance. .
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- **Power adjustment:** Applicable to power electronic modules, it can be used to adjust the power in the circuit to meet the needs of different application scenarios. .
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**Precautions for use:**.
1. **Heat dissipation design:** In high current applications, it is necessary to reasonably design the heat dissipation system to ensure that the device works within the appropriate temperature range to maintain its performance and life. .
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2. **Voltage and current limit:** Pay attention to the maximum operating voltage and current of the device, and do not exceed the specified parameter range to prevent damage to the device. .
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3. **Anti-static measures:** During transportation and use, please take anti-static measures to avoid the influence of static electricity on the device. .
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4. **Reference data sheet:** When designing the circuit, please read the device data sheet carefully to ensure that the design and use are in accordance with the manufacturer's recommendations. .
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In summary, 50N03-TO251-VB is an N-channel field effect transistor suitable for high current application scenarios, and is widely used in power modules, motor drive modules, power inverters and other fields. When using, please follow the relevant precautions to ensure the reliability and performance of the device in various application scenarios.

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