Model: 2SK3147STL-E-VB.
Silk screen: VBE1101M.
Brand: VBsemi.
Parameter description: .
- Polarity: N channel.
- Rated voltage: 100V.
- Maximum continuous drain current: 18A.
- Static drain-source resistance (RDS(ON)): 115mΩ @ 10V, 121mΩ @ 4.5V.
- Gate-source voltage (Vgs ): 20V (±V).
- Turn-on voltage (gate threshold voltage): 1.6V.
- Package: TO252.
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Application introduction: .
2SK3147STL-E- VB is an N-channel field-effect transistor (MOSFET) device with high voltage capability and low drain-source resistance suitable for a variety of high-performance electronic applications. .
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Application fields: .
1. **Power module**: 2SK3147STL-E-VB is suitable for switching power supplies, power management modules and battery protection circuits, helping to improve power conversion efficiency. Especially suitable for high voltage applications. .
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2. **Motor Drive**: The high current handling capability and low resistance of this MOSFET device make it ideal for use in motor drives, motor control and motor protection, and can be used in a variety of motor applications . .
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3. **Battery Management**: In electric vehicles, power tools and portable equipment, 2SK3147STL-E-VB can be used in battery management systems to ensure the safe charging, discharging and protection of batteries, especially in In applications requiring high voltage and current. .
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4. **Power switch**: This MOSFET can be used in high voltage and high current switching circuits, such as power switches and power inverters. .
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5. **Industrial Control**: 2SK3147STL-E-VB can be used in industrial control applications such as high voltage motor drives, PLC (Programmable Logic Controller) and power distribution. .
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In short, 2SK3147STL-E-VB is a versatile electronic device suitable for various electronic applications that require high voltage, high current capability, low resistance and reliability. It can be used in power management, motor control, battery protection, power switches, industrial control and other modules.