Model: 2SK2857-VB.
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**Silkscreen:** VBI1695.
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**Brand:** VBsemi.
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**Parameters:**.
- Type: N-channel.
- Rated voltage (Vds): 60V.
- Maximum current (Id): 5A.
- Static drain-source resistance (RDS(ON)): 76mΩ @ 10V, 88mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 1~3V.
- Package: SOT89-3.
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**Product Introduction:**.
2SK2857-VB is an N-channel field effect transistor (MOSFET) produced by VBsemi, suitable for a variety of electronic applications. The device has medium current and voltage characteristics and is suitable for circuits requiring medium power and current control. .
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**Main features:**.
- Medium current and voltage: Suitable for medium current and voltage loads with suitable performance. .
- Low on-resistance: With low static drain-source resistance (RDS(ON)), it helps reduce power consumption and improve efficiency. .
- Threshold voltage range: It can adapt to different circuit control requirements and has a wide threshold voltage range. .
- SOT89-3 package: The small SOT89-3 package is suitable for compact circuit design. .
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**Application areas:**.
2SK2857-VB is generally used in the following fields and modules: .
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1. **Low-power electronic devices:** Due to its medium current and voltage characteristics, it is often used in low-power electronic devices such as portable devices, sensors and small power management. .
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2. **Signal switch:** In signal switching circuits, such as switching circuits in analog and digital circuits, to achieve signal switching and control. .
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3. **Power Management:** 2SK2857-VB can be used in power management modules such as battery charging, power source selection and low power standby mode. .
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4. **Audio Amplifier:** In low to medium power audio amplifier circuits, it can be used to enhance the amplification performance of audio signals. .
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It should be noted that the specific application areas may vary depending on the product use, circuit design and specification requirements. When selecting and using this model, it is recommended to determine its suitability based on the electrical characteristics and performance requirements of the specific application. This device is suitable for applications requiring medium power and current control.