**2SK2462-VB**.
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**Silk screen:** VBM1101M .
**Brand:** VBsemi .
**Parameters:** TO220; N—Channel , 100V; 18A; RDS(ON)=127mΩ@VGS=10V, VGS=20V; Vth=2~4V .
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**Package:** TO220 .
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** Detailed parameter description: ** .
- **Channel type: ** N—Channel .
- **Maximum withstand voltage: ** 100V .
- **Maximum current: ** 18A.
- **On-resistance:** 127mΩ (at VGS=10V), 127mΩ (at VGS=20V) .
- **Threshold voltage:** 2~4V .
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**Application Introduction:** .
This device is an N-Channel MOSFET, suitable for modules that need to control forward current, such as power switches and current regulation. .
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**Function:** .
- Control forward current, suitable for applications requiring N-Channel channel. .
- Plays a key role in power switching and current regulation circuits. .
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**Application field module:**.
1. **Power switch module:** Used to build a reliable forward current switching circuit to ensure the normal operation of the power system. .
2. **Current Regulation Module:** Suitable for high current applications requiring N-Channel. .
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**Usage Precautions:**.
1. **Voltage and current limits:** Do not exceed the specified maximum voltage and current. .
2. **Temperature control:** Pay attention to the temperature of the device when it is working to avoid overheating. .
3. **Threshold voltage selection:** Select the appropriate threshold voltage according to the application requirements. .
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If you need further information or have other questions, please let me know.