Model: 2N7002WT1G-VB.
Silk screen: VBK162K.
Brand: VBsemi.
Parameter description: .
- MOSFET type: N channel.
- Rated voltage: 60V.
- Maximum current: 0.35A.
- On-resistance (RDS(ON)): 1800mΩ @ 10V, 2160mΩ @ 4.5V, 20Vgs.
- Threshold voltage (Vth): 1~2.5V.
- Package: SC70-3.
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Application Introduction: .
2N7002WT1G-VB is an N-channel MOSFET, suitable for a variety of electronic equipment and circuits, especially suitable for applications requiring low-power switching, Signal amplification and current control applications. .
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**Application areas and module description:**.
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1. **Low power switching module**:.
- Due to the characteristics of its N-channel MOSFET , 2N7002WT1G-VB is suitable for low power switching modules and can be used to control low voltage and low current switching operations. .
- Widely used in portable electronic equipment, power management modules, and small electronic switches. .
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2. **Signal amplification module**: .
- This MOSFET can be used in the signal amplification module to amplify and control the transmission of small signals. .
- Used for signal processing in audio amplifiers, sensor interfaces, and signal conditioning circuits. .
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3. **Current Control Module**: .
- The characteristics of 2N7002WT1G-VB make it suitable for current control applications and can be used to adjust and limit the flow of current. .
- Used for precise current control in constant current sources, current regulation circuits, and current control switches. .
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4. **Analog switch module**: .
- This MOSFET can be used in analog switch module to switch analog signals. .
- Widely used in analog circuit switching, analog signal selection and analog circuit switching. .
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In summary, 2N7002WT1G-VB is an N-channel MOSFET suitable for a variety of low power, signal processing and current control applications. Its properties make it an important component in low-power electronics, signal amplifiers, current control modules and analog switching modules, helping to achieve precise circuit control and signal processing.