Model: 2N7002LT1G-VB.
Silk screen: VB162K.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Rated voltage: 60V.
- Maximum continuous current: 0.3A.
- Static on resistance (RDS(ON)): 2800mΩ @ 10V, 3000mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Threshold voltage (Vth): 1.6V.
- Package type: SOT23.
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Application Introduction:.
2N7002LT1G-VB is an N-channel low power MOSFET suitable for electronic applications that require low power switching. Here are some possible application areas for modules: .
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1. **Power Management Module**: This low-power MOSFET can be used in power management modules to implement switching and power management of power supplies. It is very useful for applications that require very low static power consumption. .
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2. **Battery Powered Module**: In portable devices and battery-powered systems, the 2N7002LT1G-VB can be used for battery protection circuits, battery management systems, and low-power power modules. .
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3. **Sensor Interface Module**: For applications that need to communicate with sensors, this MOSFET can be used in sensor interface modules to achieve low-power data acquisition and communication. .
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4. **Mobile Device Module**: In mobile devices, the 2N7002LT1G-VB can be used to control and manage different power modules of the device to extend battery life. .
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5. **Low-Power Electronic Module**: In applications that require very low power consumption, such as low-power computing, portable medical devices, and low-power sensor nodes, this MOSFET can be used for power management and power control. .
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These are some examples of application areas where the 2N7002LT1G-VB N-channel low-power MOSFET module may be used. The parameters of this device make it suitable for applications that require low-power power switching and power management, especially where low static power consumption is required. In actual applications, it is important to adhere to the electrical specifications and operating conditions in the data sheet to ensure optimal performance and reliability.