Model: 15N10 TO252-VB.
Silkscreen: VBE1101M.
Brand: VBsemi.
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Detailed parameter description:.
- Channel type: N-channel.
- Rated voltage: 100V.
- Rated current: 18A.
- Static resistance: 115mΩ @ 10V, 121mΩ @ 4.5V.
- Gate-source voltage: ±20V.
- Threshold voltage: 1.6V.
- Packaging type: TO252.
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Application introduction:.
15N10 TO252-VB MOSFET is suitable for applications requiring high voltage and high current. It is often used in circuit modules in the fields of power amplification, switching, inverters, etc. .
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These products can be used in the following field modules: .
1. Power amplifier module: Due to the high rated current and voltage of 15N10 TO252-VB, it can be used in power amplifier modules that amplify and drive high power signals. .
2. Switch module: The high current and low resistance characteristics of 15N10 TO252-VB make it an ideal choice in switch modules, capable of efficiently switching high power loads in switching circuits. .
3. Inverter module: Due to its high rated voltage and current capability, 15N10 TO252-VB can be used in inverter modules to convert DC power into AC power, which is widely used in solar inverters, electric vehicle chargers and other fields. .
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In short, 15N10 TO252-VB MOSFET is suitable for field modules that require high voltage and high current drive, such as power amplifiers, switches and inverter modules. .