In high-voltage, high-frequency application scenarios such as industrial power supplies, motor drives, renewable energy systems, and automotive electronics, ROHM's R6509ENXC7G, with its advanced trench structure and robust performance, has been a trusted choice for engineers globally. However, in the post-pandemic era marked by global supply chain disruptions and trade uncertainties, this imported component faces significant challenges: extended lead times (often exceeding several months), procurement costs vulnerable to currency fluctuations, and delayed technical support. These issues hinder production schedules and cost optimization for downstream enterprises. Against this backdrop, domestic substitution has evolved from an alternative to a necessity, serving as a critical strategy for ensuring supply chain security, reducing costs, and enhancing competitiveness.
Leveraging years of expertise in power semiconductors, VBsemi introduces the VBMB165R09S N-channel power MOSFET through independent R&D. This product is meticulously designed to替代 the R6509ENXC7G, offering core advantages of parameter enhancements, technological parity, and full package compatibility. It enables direct replacement without circuit modifications, delivering a more stable, cost-effective, and locally supported solution for high-voltage electronic systems.
Comprehensive Parameter Advancement, Enhanced Performance Margins, Adapting to Stringent Demands.
Tailored as a domestic alternative to the R6509ENXC7G, the VBMB165R09S achieves notable improvements in key electrical parameters, ensuring robust performance for demanding applications:
First, the drain-source voltage is maintained at 650V, matching the original model, while providing a reliable foundation for high-voltage operations in environments with grid fluctuations and transient overvoltage risks.
Second, the continuous drain current is rated at 9A, equal to the R6509ENXC7G, ensuring seamless adaptation to high-power circuit designs and boosting system stability under heavy loads.
Third, the on-state resistance is reduced to 550mΩ (@10V gate drive), outperforming the R6509ENXC7G's 585mΩ—a 6% reduction. This lowers conduction losses, improves overall efficiency, and minimizes heat generation in high-frequency switching applications, easing thermal management demands.
Additionally, the VBMB165R09S supports a ±30V gate-source voltage, enhancing gate ESD protection and noise immunity to prevent unintended turn-on in complex electromagnetic environments. The 3.5V gate threshold voltage balances drive convenience and switching reliability, seamlessly integrating with mainstream driver ICs without circuit adjustments, simplifying substitution.
Empowered by Advanced SJ_Multi-EPI Technology, Elevating Reliability and Stability.
The R6509ENXC7G relies on trench technology for low on-resistance and fast switching. The VBMB165R09S utilizes advanced SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, building on the original's strengths while optimizing reliability. This technology enables lower RDS(on) and improved switching characteristics, reducing charge/discharge losses and enhancing dv/dt tolerance. The device undergoes rigorous avalanche testing and high-voltage screening, excelling in single-pulse avalanche energy handling to mitigate damage risks from energy surges. With an operating temperature range of -55°C to 150°C, it withstands harsh industrial and outdoor conditions. Having passed 1000-hour high-temperature/high-humidity (85°C/85% RH) aging tests and long-term reliability验证, its failure rate is below industry averages, ensuring durable performance in critical applications like industrial automation, medical devices, and emergency power systems.
Fully Compatible Package, Enabling "Seamless, Risk-Free, and Immediate" Replacement.
For downstream enterprises, substitution complexity is a major concern. The VBMB165R09S addresses this through its package design. It features a TO-220F package, identical to the R6509ENXC7G in pinout, pin spacing, dimensions, and heatsink structure. Engineers can achieve "plug-and-play" replacement without PCB layout changes or thermal redesign. This compatibility reduces verification time to 1-2 days, eliminates costs from PCB revisions, and avoids re-certification efforts, accelerating supply chain cycles and enabling quick adoption of domestic alternatives.
Local Strength Assurance, Dual Peace of Mind for Supply Chain Security and Technical Support.
Unlike imported components plagued by supply chain volatility, VBsemi leverages China's robust semiconductor ecosystem, with modern production bases in Jiangsu and Guangdong, ensuring full-process R&D and stable mass production. The VBMB165R09S boasts a standard lead time within 2 weeks, with expedited options for 72-hour delivery, mitigating risks from international logistics, tariffs, and geopolitics. As a local brand, VBsemi provides dedicated technical support: comprehensive documentation includes substitution验证 reports, datasheets, thermal guides, and application circuits. The team offers tailored advice and rapid response within 24 hours for technical issues, overcoming slow support and high communication costs associated with imports, making substitution smooth and reliable.
From industrial power supplies and motor drives to renewable energy inverters and automotive systems, the VBMB165R09S, with its core advantages of "superior parameters, enhanced stability, package compatibility, controllable supply, and responsive service," has become the preferred domestic alternative to the R6509ENXC7G. It is already adopted by leading companies across industries, earning market acclaim. Choosing the VBMB165R09S is not just a component swap—it is a strategic move to upgrade supply chain security, optimize costs, and boost product competitiveness, offering better performance, stable supply, and seamless support without R&D risks.