In power design, balancing high-voltage withstand capability, high-current handling, and switching efficiency is a critical challenge. This article takes two representative MOSFETs—AOTF7S65 (high-voltage) and AON7516 (high-current)—as benchmarks, analyzes their design focus and application scenarios, and evaluates their domestic alternatives VBMB165R09S and VBQF1303. By comparing parameter differences and performance orientations, we provide a clear selection guide to help you find the optimal power switching solution.
Comparative Analysis: AOTF7S65 (High-Voltage N-channel) vs. VBMB165R09S
Analysis of the Original Model (AOTF7S65) Core:
This is a 650V N-channel MOSFET from AOS in a TO-220F package. Its design core is to provide robust high-voltage switching capability. Key advantages include a high drain-source voltage (Vdss) of 650V, a continuous drain current (Id) of 7A, and an on-resistance (RDS(on)) of 650mΩ at 10V. It is suitable for applications requiring reliable high-voltage operation.
Compatibility and Differences of the Domestic Alternative (VBMB165R09S):
VBsemi’s VBMB165R09S is a pin-to-pin compatible alternative in the same TO-220F package. The main differences are in electrical parameters: VBMB165R09S offers a lower on-resistance of 550mΩ at 10V and a higher continuous current of 9A, while maintaining the same 650V voltage rating. This provides improved conduction loss and current handling.
Key Application Areas:
Original Model AOTF7S65: Ideal for high-voltage, medium-power switching applications such as offline SMPS, PFC circuits, and motor drives in industrial systems.
Alternative Model VBMB165R09S: Better suited for high-voltage applications where lower conduction loss and higher current capacity (up to 9A) are needed, offering an upgraded performance option.
Comparative Analysis: AON7516 (High-Current N-channel) vs. VBQF1303
Analysis of the Original Model (AON7516) Core:
This 30V N-channel MOSFET from AOS in a DFN-8 (3x3) package focuses on high-current efficiency in a compact space. Its core advantages are a high continuous current of 30A and a low on-resistance of 6.8mΩ at 4.5V, enabling efficient power handling with minimal loss.
Compatibility and Differences of the Domestic Alternative (VBQF1303):
VBsemi’s VBQF1303 is a direct pin-to-pin alternative in the same DFN-8 package. It delivers significant performance enhancement: an ultra-low on-resistance of 5mΩ at 4.5V (3.9mΩ at 10V) and a much higher continuous current of 60A, while maintaining the same 30V voltage rating.
Key Application Areas:
Original Model AON7516: Excellent for high-current, low-voltage applications such as synchronous rectification in DC-DC converters, motor drives in robotics, and power management in computing devices.
Alternative Model VBQF1303: Ideal for demanding high-current scenarios requiring minimal conduction loss and superior thermal performance, such as high-power POL converters, server VRMs, or high-performance motor controls.
Conclusion:
This analysis reveals two distinct selection paths:
1. For high-voltage applications, the original AOTF7S65 provides reliable 650V switching, while its domestic alternative VBMB165R09S offers lower on-resistance and higher current for improved efficiency.
2. For high-current applications, the original AON7516 delivers strong performance in a small footprint, whereas the domestic alternative VBQF1303 significantly outperforms in both current capacity (60A) and on-resistance, enabling higher power density and lower losses.
The core takeaway is that selection depends on precise requirement matching. Domestic alternatives not only provide reliable backup options but also offer performance enhancements in key parameters, giving engineers greater flexibility in design trade-offs and cost control. Understanding each device’s design philosophy and parameters is essential to maximize its value in your circuit.