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TPCF8402-VB Product details

Product introduction:

Product Introduction: TPCF8402-VB MOSFET

TPCF8402-VB is a high-efficiency dual N+P channel MOSFET in DFN8(3X2)-B package, designed for high-efficiency switching and power management applications. The device has a dual-channel design, including an N-Channel and a P-Channel MOSFET, suitable for symmetrical or complementary switching circuits. Its maximum drain-source voltage (VDS) is ±20V, the gate-source voltage (VGS) is ±8V, and the drain current (ID) is 5.9A (N-Channel) and -4.1A (P-Channel). The on-resistance of TPCF8402-VB at VGS = 4.5V is 36mΩ (N-Channel) and 97mΩ (P-Channel), and at VGS = 10V, it is 32mΩ and 69mΩ, respectively, providing low power loss and high efficiency performance.

The device uses Trench technology to provide excellent conduction performance and is suitable for low-voltage power systems, load switches, power conversion and other fields. Its DFN8 (3X2) -B package has a small size and high heat dissipation capability, which is very suitable for high-density, high-efficiency circuit design, especially for integrated applications that require dual-channel MOSFET structure.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X2)-B Dual-N+P ±20V 0.8/-0.8V 5.9/-4.1A 32/69mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X2)-B Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X2)-B Dual-N+P ±20V 0.8/-0.8V 5.9/-4.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X2)-B Dual-N+P ±20V 0.8/-0.8V 5.9/-4.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X2)-B Dual-N+P
Detailed parameter description:

- **Package type**: DFN8 (3x2)-B
- **Configuration**: Dual N+P channel MOSFET
- **Maximum drain-source voltage (VDS)**: ±20V
- **Maximum gate-source voltage (VGS)**: ±8V
- **Gate threshold voltage (Vth)**:
- N-Channel: 0.8V
- P-Channel: -0.8V
- **On-resistance (RDS(ON))**:
- N-Channel:
- 36mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- P-Channel:
- 97mΩ @ VGS = 4.5V
- 69mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**:
- N-Channel: 5.9A
- P-Channel: -4.1A
- **Technology**: Trench
- **Operating Temperature Range**: -55°C to 150°C
- **Package Size**: DFN8 (3x2)-B, suitable for miniaturized designs
- **Power Loss**: Low on-resistance, reduced energy loss, suitable for high-efficiency switching and power management
- **Current Density**: Excellent current handling capability, suitable for dual-channel configurations and low- to medium-voltage applications

Domain and module applications:

Application areas and module examples:

1. **Power management system**:
The low on-resistance and dual-channel design of TPCF8402-VB make it ideal for power management applications, especially in bipolar power systems. In battery management, DC-DC converters, voltage regulators, and power modules, the complementary configuration of N-Channel and P-Channel MOSFETs helps provide more efficient and stable power conversion and regulation, especially for scenarios requiring bipolar switches.

2. **High-efficiency DC-DC converter**:
Due to its low RDS(ON) and high current handling capability, TPCF8402-VB is ideal for high-efficiency DC-DC converters. It can be used as a synchronous rectifier to improve overall efficiency and reduce power losses in low voltage output (such as 5V, 12V, etc.) systems. Its high switching speed and excellent current handling capability make it excel in power-intensive applications, especially for mobile phone chargers, embedded systems, power supplies and consumer electronics.

3. **Load Switch and Load Control**:
In modern electronic devices and battery-powered systems, TPCF8402-VB can be used as a load switch to accurately control the flow of current, especially in systems that need to switch positive and negative loads. It can be widely used in smart hardware, battery-powered devices and automotive electronics. Through bipolar design, it can efficiently manage load switching, extend battery life and improve system stability.

4. **Automotive Electronics and Electric Vehicles**:
TPCF8402-VB can be used in battery management systems (BMS) of electric vehicles (EV) and hybrid electric vehicles (HEV), especially in battery charge and discharge control, current conduction and overcurrent protection. Its dual-channel MOSFET configuration helps achieve efficient current control and power conversion, playing an important role in battery-powered and battery protection circuits.

5. **Consumer Electronics and Mobile Devices**:
In consumer electronics, TPCF8402-VB can be used as part of a battery power management system for battery charge and discharge control and power switching. Its low on-resistance and high current carrying capacity ensure efficient power conversion, which is suitable for mobile devices such as smartphones, tablets, wearable devices, etc., optimizing energy utilization and extending battery life.

6. **Smart Home and Industrial Automation Systems**:
The efficient switching characteristics and small package of TPCF8402-VB make it suitable for power management modules in smart home and industrial automation systems. In applications such as smart power sockets, load switches, motor drives, and automation control, the device can provide efficient and stable current management to ensure safe, stable, and low-power operation of the system.

7. **LED Driver Power and Lighting Applications**:
TPCF8402-VB can also be used in LED driver power and other lighting systems, especially those applications that require high efficiency and low power loss. The dual N+P channel MOSFET configuration is suitable for high frequency switching applications, helping to improve the efficiency and operating stability of lighting power supplies.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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