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IRF7492TRPBF-VB Product details

Product introduction:

1. Product Introduction
The IRF7492TRPBF-VB is a single N-channel MOSFET in a SOP8 package, designed for applications requiring high voltage and medium current handling. With a drain-source voltage (VDS) of 200V, this MOSFET is suitable for high-voltage switching and control tasks. Its threshold voltage (Vth) is 3.5V, and it can effectively conduct at a higher gate-source voltage. The on-resistance (RDS(ON)) of the IRF7492TRPBF-VB is 65mΩ at VGS=10V, and the maximum drain current (ID) is 5.2A. Using trench technology, this MOSFET is designed to provide efficient switching performance and low conduction losses, and is suitable for use in high-voltage and high-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 200V 3.5V 5.2A 65mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 200V 3.5V 5.2A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 200V 3.5V 5.2A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
2. Detailed parameter description
- **Package type**: SOP8
- **MOSFET type**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 65mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5.2A
- **Technology type**: Trench technology
- **Power dissipation**: Depends on the actual heat dissipation design
- **Switching speed**: Depends on the circuit layout and driving conditions
- **Input capacitance (Ciss)**: For related parameters, please refer to the detailed data sheet

Domain and module applications:

3. Application Fields and Modules
The high voltage handling capability and moderate current capability of the IRF7492TRPBF-VB make it suitable for a variety of applications, especially in scenarios requiring high voltage switching and load control. Here are some specific application examples:

1. **High Voltage Power Switch**: This MOSFET performs well in high voltage power switches, such as in power converters and switching power supplies, where it can handle voltages up to 200V, ensuring efficient and stable switching operations and optimizing power conversion efficiency.

2. **Motor Drive**: In motor drive circuits, especially in applications requiring high voltage (such as power tools, industrial motor drives), the IRF7492TRPBF-VB can effectively control the current flow and achieve reliable motor control while reducing power consumption and heat generation.

3. **Power Management**: Used in power management systems, such as high voltage DC-DC converters and power regulators, the IRF7492TRPBF-VB can handle higher voltage switching operations and improve system efficiency and stability.

4. **Inverter and Photovoltaic System**: In photovoltaic inverter and other high voltage inverter applications, this MOSFET can withstand high voltage and provide stable switching performance, ensuring the reliability and efficiency of the system in high power conversion.

In general, IRF7492TRPBF-VB is suitable for high voltage power switching, motor drive, power management and inverter with its high voltage tolerance and low on-resistance, and is an ideal choice for high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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