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ECH8663R-VB Product details

Product introduction:

ECH8663R-VB Product Introduction

ECH8663R-VB is a high-performance dual N-channel MOSFET in DFN8(3x2)-B package. This MOSFET is designed for low-voltage applications, with a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±20V, suitable for use in high switching frequency circuits. Its turn-on voltage (Vth) is 1.5V, and its on-resistance (RDS(ON)) is 23mΩ at VGS=4.5V and 17mΩ at VGS=10V, and its maximum continuous drain current (ID) reaches 4.8A. ECH8663R-VB uses Trench technology to provide low on-resistance and high switching efficiency to meet the needs of various high-performance electrical applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X2)-B Dual-N 20V 1.5V 4.8A 17mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X2)-B Dual-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X2)-B Dual-N 20V 1.5V 4.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X2)-B Dual-N 20V 1.5V 4.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X2)-B Dual-N
ECH8663R-VB parameter description

1. **Package type (Package): ** DFN8(3x2)-B
2. **Channel configuration (Configuration): ** Dual N-Channel (Dual N-Channel)
3. **Drain-source voltage (VDS): ** 20V
4. **Gate-source voltage (VGS): ** ±20V
5. **Throw-on voltage (Vth): ** 1.5V
6. **On-resistance (RDS(ON)): **
- 23mΩ @ VGS=4.5V
- 17mΩ @ VGS=10V
7. **Maximum drain current (ID): ** 4.8A
8. **Technology (Technology): ** Trench

Domain and module applications:

Applicable fields and modules

The low voltage and high switching efficiency characteristics of ECH8663R-VB enable it to excel in multiple application fields and modules. Here are some specific application scenarios and module examples:

1. **DC-DC converter:** In low voltage DC-DC converters, the low on-resistance and high current capability of ECH8663R-VB can improve conversion efficiency and reduce power consumption, ensuring stable power output. This makes it particularly suitable for portable devices, computer power management and other applications that require efficient power conversion.

2. **Mobile device power management:** For mobile devices such as smartphones and tablets, ECH8663R-VB can provide efficient switching performance and good current handling capabilities, thereby optimizing battery management and power distribution, and extending the battery life of the device.

3. **LED drive circuit:** In LED drive circuits, the low on-resistance and good switching speed of ECH8663R-VB enable it to stably drive LEDs, ensure efficient light source control and reduce power consumption.

4. **Small Motor Drive:** In small motor or fan applications that require low voltage drive, the ECH8663R-VB provides appropriate switching performance and current capability to ensure smooth operation and effective control of the motor.

5. **Switching Power Management:** In the switching power supply (SMPS), the ECH8663R-VB is able to handle high switching frequency tasks, provide stable switching characteristics and low power consumption, and is suitable for a variety of high-performance power management applications.

The high performance characteristics of the ECH8663R-VB make it excel in these applications, providing a reliable solution for low-voltage, high-efficiency electrical systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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