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VBMB16R12 Product details

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Product introduction：

Product introduction: VBsemi's VBMB16R12 is a single N-type field effect transistor with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. It is suitable for in a wide range of application fields.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 600V 30（±V） 3.5V 12A 700 (mΩ) Plannar
Detailed parameter description:
- VDS (drain-source voltage): 600V
- VGS (gate-to-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- On-resistance (m次) when VGS=10V: 700
- Maximum drain current (ID): 12A
- Technology: Flat process
-Package: TO220F

Domain and module applications：

Application example:
- Power modules: Due to its high drain-source voltage and gate-source voltage, VBMB16R12 is suitable for power modules such as switching power supplies, inverters and chargers.
- Motor drive: can be used for industrial motor control and automotive electric motors, supporting high voltage and high current requirements.
- Lighting system: In LED driving and lighting systems, VBMB16R12 can be used as a switching device to provide stable current control and high-efficiency energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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