Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
550V |
30（±V） |
3V |
2A |
|
|
3000 (mΩ) |
Plannar |
Product model: VBE155R02
Brand: VBsemi
Affiliated company: Shenzhen Weibi Semiconductor Co., Ltd.
parameter:
- Structure type: Single N
- Rated drain-source voltage (VDS): 550V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3V
- Drain-source resistance (VGS=10V): 3000 m次
- Drain current (ID): 2A
- Technology: Plannar
Package: TO252
Domain and module applications：
for example:
1. Automotive electronic modules:
Since VBE155R02 has moderate drain current and low power consumption, it is suitable for driving devices in automotive electronic modules, such as body control modules, electric vehicle charging control modules, etc.
2. LED lighting driver:
In LED lighting drivers, power MOSFETs are needed to drive and control LED lamp beads. The VBE155R02's TO252 package and Plannar technology make it an ideal choice in LED lighting drivers.
3. Industrial control module:
In industrial control modules, power MOSFETs are required to achieve precise control of various industrial equipment. The moderate current capability and low power consumption of the VBE155R02 make it suitable for power switching and current regulation functions in industrial control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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