Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
100V |
±20V |
1.5V |
2A |
|
260(mΩ) |
240(mΩ) |
|
**BSS119N-VB Detailed parameter description:**
- **Silkscreen:** VB1102M
- **Brand:** VBsemi
- **Package:** SOT23-3
- **Channel type:** N-Channel
- **Maximum withstand voltage:** 100V
- **Maximum current:** 2A
- **On-resistance (RDS(ON)):** 246mΩ @ VGS=10V,
--VGS=±20V
- **Gate-source voltage threshold (Vth):** 2V
Domain and module applications：
Particularly suitable for the following fields and modules:
1. **Power switch module:** Due to the moderate voltage and current characteristics of BSS119N-VB, it can be used as a key component in the power switch module to achieve efficient energy management and power control.
2. **Motor drive module:** In applications where motor control is required, this transistor can be used as a power switch in the motor drive module to achieve precise control of the motor.
3. **LED drive module:** Suitable for the field of LED lighting, as a key component in the LED drive module, to ensure the stable operation and efficient energy consumption of the LED.
4. **Switching power supply control module:** In the switching power supply, it can be used as a switch controller to achieve efficient and reliable power switching.
5. **Signal amplifier module:** Due to its N-Channel channel type, it can be used as a key component of the amplifier in the signal amplification circuit to enhance the strength of the signal.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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