Compared to traditional silicon (Si) MOSFETs, Silicon Carbide (SiC) MOSFETs offer superior electrical characteristics, including high breakdown voltage, high electron mobility, and high thermal stability. This results in higher switching speeds and lower switching losses.

The switching state of a MOSFET generally falls into two categories: cutoff and conduction.

When the gate voltage is above a certain threshold, the MOSFET is in conduction mode.

When the gate voltage is below a certain threshold, the MOSFET is in cutoff mode.

In practical applications, SiC MOSFETs typically require control of the gate voltage to achieve switching behavior. By controlling the gate voltage, the switching of SiC MOSFETs can be controlled.

Due to their excellent switching characteristics, SiC MOSFETs are suitable for high-speed switching circuits. However, there will inevitably be some losses in the device's switching behavior. While the device itself is an important factor in switch losses, operating conditions and external circuit conditions are also critical factors affecting the high-speed switching characteristics of SiC MOSFETs.

Generally, operating conditions affect the conduction and cutoff characteristics of MOSFETs, which in turn affect switching speed and losses. External circuits, including drive circuits and load circuits, can also affect the switching speed and losses of MOSFETs.

Switching losses are influenced by several factors:

Switching frequency: Higher switching frequencies result in higher switching losses.

Switching voltage: Higher switching voltages lead to higher switching losses.

Switching current: Higher switching currents result in higher switching losses.

In addition to the above factors, other factors that affect device behavior and usage include MOSFET static characteristics, dynamic characteristics, and temperature characteristics.

SiC MOSFETs

Silicon Carbide (SiC) is a third-generation semiconductor material that offers advantages over traditional silicon (Si), including high voltage resistance, high frequency resistance, and high temperature resistance. Firstly, SiC's breakdown voltage is 8-10 times that of silicon, allowing it to withstand higher currents and voltages, leading to smaller product designs and better efficiency. Secondly, SiC does not exhibit the current tailing phenomenon, which improves component switching speeds, being 3-10 times faster than silicon, making it suitable for higher frequencies and faster switching speeds. Finally, SiC has a very high thermal conductivity, allowing it to operate at higher temperatures compared to silicon.

Features

High-temperature operation, high breakdown voltage, low losses, fast switching speed, etc.

Application fields

Mainly concentrated in the field of power electronics, including photovoltaics, new energy vehicles, charging piles, wind power, rail transportation, etc.