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Avalanche Breakdown (MOSFET)
time:2023-09-19
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Avalanche breakdown refers to the phenomenon of carrier multiplication in semiconductor materials under high voltage and high electric field intensity.

When the electric field intensity inside the semiconductor reaches a certain level, the originally stable carriers will be accelerated, collide with the lattice, and generate more carriers.

These newly generated carriers will continue to collide with the lattice, generating even more carriers, forming a chain reaction similar to an avalanche.

Ultimately, this multiplication effect leads to a rapid increase in current in the device, which can cause device damage.

Avalanche breakdown generally occurs in PN junctions with low doping concentration and high applied voltage. This is because PN junctions with low doping concentration have a wider space charge region, providing more opportunities for collision ionization.

Hazards

Avalanche breakdown can reduce the breakdown voltage of the device, affecting its reliability and stability.

The high current generated by avalanche breakdown may cause device overload, or even device burnout.

Avalanche breakdown can also lead to performance degradation of the device, such as changes in threshold voltage and increased leakage current.

Therefore, research and control of avalanche breakdown are of great significance for improving the performance and reliability of semiconductor devices.

Solutions

  1. Optimize the device structure to increase the breakdown voltage.

  2. Use high dielectric constant materials as the gate insulation layer to reduce the electric field intensity.

  3. Add voltage protection circuits: Voltage protection circuits, such as diodes, current limiters, or other voltage protection devices, can be added between the drain and source of the MOSFET to prevent the voltage from exceeding the rated value.

  4. Control circuit design: In circuit design, control the magnitude and rate of change of the voltage reasonably to avoid voltage spikes or excessively high voltages, thereby reducing the risk of MOSFET avalanche breakdown.


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