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SIHH240N65E-T1-GE3-VB Product details

Product introduction:


SIHH240N65E-T1-GE3-VB is a Single N-MOS deeply optimized for high-voltage power switching applications, using SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology. It achieves a low on-resistance of 160mΩ and a continuous current-carrying capability of 20A at a 650V withstand voltage level. The DFN8X8 package combines low thermal resistance with a compact footprint, making it particularly suitable for high-power-density applications such as server power supplies, photovoltaic inverters, and electric vehicle charging stations. It is an ideal cost-effective and efficiency-enhancing alternative to traditional TO-220/TO-247 packaged devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8X8 Single-N 650V 3.5V 20A 160(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8X8 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8X8 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8X8 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8X8 Single-N

- VDS=650V: Suitable for three-phase 380V rectification, high-voltage DC-DC converters, and industrial bus systems, providing ample margin for voltage spikes and enhancing system avalanche capability.
- VGS=±30V: Wide gate drive window, compatible with common 10V~20V drive levels, can directly connect to dedicated gate driver ICs without complex level shifting circuits.
- Vth=3.5V (typical): Moderate threshold voltage, strong anti-interference capability, while ensuring reliable turn-on and turn-off of the drive logic in high-voltage applications.
- RDS(on)=160mΩ @ VGS=10V: Super junction technology significantly reduces conduction losses, greatly lowering full-load temperature rise, allowing for smaller heatsinks or higher power density.
- ID=20A: Ample continuous current margin, capable of handling startup surges from motors, transformers, and capacitive loads, with stronger peak current capability.
- Package DFN8X8: Low parasitic inductance, low thermal resistance, supports high-frequency switching, saves PCB area, and facilitates automated mounting and compact structural design.

Domain and module applications:


- Server/Telecom Power Supplies: In high-voltage LLC or phase-shifted full-bridge topologies, low conduction and switching losses improve conversion efficiency, and the DFN8X8 package aids in power module miniaturization.
- Photovoltaic Inverters: 650V withstand voltage combined with low RDS(on) effectively reduces DC-AC conversion losses, improves MPPT and grid-tied efficiency, and adapts to a wide input voltage range.
- Electric Vehicle Charging Piles: High withstand voltage and high current capability meet the needs of high-voltage DC charging modules, enhancing module reliability and thermal management margin.
- Industrial Motor Drives: The superjunction structure reduces high-voltage PWM switching losses, lowers driver temperature rise, improves motor control precision and system lifespan.
- High-Voltage DC-DC Converters: As a synchronous rectifier or high-side switch, replacing traditional high-voltage MOSFETs can improve heavy-load efficiency by 1~3%, benefiting module power density.
- Uninterruptible Power Supplies (UPS): Provides efficient and stable power switching in battery boost and inverter stages, reducing continuous operating power consumption and enhancing load capacity.

**Selection Summary:** The SIHH240N65E-T1-GE3-VB achieves an excellent balance between high voltage withstand, low on-resistance, high output current, and compact packaging. It is a cost-effective general-purpose choice for 650V-class high-voltage switching applications, especially suitable for industrial and new energy projects with strict requirements for power density, thermal dissipation, and system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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