Product introduction：
Are you designing a high-power-density industrial power supply or new energy system, facing a 650V high-voltage bus but demanding lower conduction losses and a more compact PCB layout? Ordinary high-voltage MOSFETs either have high on-resistance or large packages, making it difficult to balance efficiency and space. VBsemi SIHH240N60E-T1-FE3-VB is designed for this—it uses advanced super junction multi-epitaxial technology to integrate 650V withstand voltage, 20A current-carrying capability, and an on-resistance of only 160mΩ into a reliable DFN8X8 package, allowing high-voltage, high-current designs without compromise.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160(mΩ) |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8X8 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8X8 |
Single-N |
|
|
|
|
|
|
|
- Voltage rating 650V, easily handling high-voltage bus fluctuations with ample safety margin
- Gate drive range ±30V, compatible with multiple drive circuits, strong overdrive capability
- Threshold voltage 3.5V, stable turn-on with standard drivers
- On-resistance 160mΩ (at 10V drive), maintaining low losses even at high voltage
- Maximum current 20A, capable of carrying high power output in DFN8X8 package
- Super junction multi-epitaxial technology (SJ_Multi-EPI), optimizing the balance between on-resistance and switching performance
Domain and module applications：
- **Switching Power Supplies / Server Power Supplies** – Acts as a high-voltage main switch, significantly reducing conduction losses, improving overall efficiency, and adapting to long-term full-load operation.
- **Photovoltaic Inverters / Energy Storage Systems** – Utilizes 650V withstand voltage and low on-resistance to efficiently complete DC-AC conversion, reducing thermal stress.
- **Electric Vehicle Charging Piles** – Plays a key switching role in high-voltage DC conversion modules, ensuring stability and reliability of high-current transmission.
- **Industrial Motor Drives** – Tolerates bus voltage fluctuations, combined with strong drive capability, enabling smooth speed regulation and higher overload margin.
- **PFC Power Factor Correction** – Performs excellently in boost topologies, reducing high-frequency switching losses, improving power factor and power quality.
- **High-Voltage DC-DC Converters** – Replaces traditional high-voltage MOS in synchronous rectification or hard-switching applications, improving conversion efficiency and reducing magnetic component size.
One-sentence summary: The SIHH240N60E-T1-FE3-VB is not an ordinary MOSFET; it is your "core switching weapon" in high-voltage power supply design, balancing voltage withstand, low resistance, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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