Product introduction：
The RJK0230DPA-WS#J5A-VB is a Half-Bridge Dual N-MOS integrated device deeply optimized for low-voltage, high-current power switching applications. Utilizing Trench technology, it achieves an excellent balance between extremely low on-resistance and high-frequency switching capability. The DFN8(5X6)-C package offers superior thermal performance and a compact footprint. The combination of 30V withstand voltage, 60A continuous current capability, and an ultra-low 3.4mΩ on-resistance makes it an ideal choice for high-density power conversion applications such as server power supplies, motor drives, and battery protection, particularly suitable for replacing traditional discrete half-bridge solutions to significantly save PCB space and reduce parasitic parameters.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
4(mΩ) |
3.4(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
|
|
- **VDS=30V**: Suitable for 5V/12V/24V power systems, providing ample voltage margin for switching spikes, enhancing circuit avalanche ruggedness.
- **VGS=±20V**: Wide gate drive voltage range, compatible with 4.5V~12V drive levels, can directly connect to PWM controllers or gate driver ICs, simplifying drive design.
- **Vth=1.7V (typical)**: Moderate threshold voltage balancing low-voltage drive capability and noise immunity, ensuring stable turn-on even under battery voltage fluctuations.
- **RDS(on)=3.4mΩ @ VGS=10V / 4mΩ @ VGS=4.5V**: Ultra-low on-resistance significantly reduces conduction losses, substantially lowering full-load temperature rise, effectively reducing heatsink area or copper requirements.
- **ID=60A**: Ample continuous current capability to handle high-power loads and short-term overcurrent surges, suitable for high-power-density designs.
- **Half-Bridge Integrated (N+N)**: Two N-MOSFETs integrated in a single DFN8(5X6)-C package, internal interconnection optimizes parasitic inductance, simplifies power stage layout, and improves system reliability.
- **Package DFN8(5X6)-C**: Bottom-side thermal pad design, low thermal resistance, good high-frequency characteristics, balancing small size with high heat dissipation capability.
Domain and module applications：
- **DC-DC Converters**: As synchronous rectifiers or half-bridge power stages, the 3.4mΩ low impedance significantly improves heavy-load efficiency, suitable for POL modules, server power supplies, and chargers.
- **Low-Voltage High-Current Motor Drives**: 60A current capability and low switching losses make motor operation smoother, with significantly reduced controller temperature rise, applicable to power tools, robot joints, etc.
- **Battery Protection Modules**: Milliohm-level on-resistance reduces self-heating of the protection board; fast switching characteristics ensure reliable shutdown during overcurrent/short circuit, extending battery pack life.
- **Power Path Management**: The half-bridge structure facilitates load switching, reverse protection, and power OR-ing, reducing conduction voltage drop and improving overall system efficiency.
- **High-Frequency Switching Power Supplies**: The Trench process and DFN package have low parasitic parameters, supporting high-frequency operation, reducing magnetic component size, and increasing power density.
- **Automotive Auxiliary Power Supplies**: Wide temperature range and 30V withstand voltage adapt to 12V/24V automotive bus, reliably handling load dump and transient overvoltage.
- **Lithium Battery Energy Storage and UPS**: In low-voltage, high-current bidirectional switching scenarios, low-loss characteristics effectively improve charge/discharge efficiency and simplify thermal design.
**Selection Summary**: The RJK0230DPA-WS#J5A-VB achieves an excellent balance between power density, thermal performance, and system cost through its integrated half-bridge dual N-channel and ultra-low on-resistance. It is a high-performance general-purpose choice for 30V low-voltage, high-current switching applications, particularly suitable for projects with strict requirements for efficiency, space, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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