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TPH1R405PL,L1Q-VB Product details

Product introduction:

TPH1R405PL,L1Q-VB is a Single N-MOSFET deeply optimized for low-voltage, high-power switching scenarios. The Trench technology achieves an excellent balance between ultra-low on-resistance and high switching speed. The DFN8(5X6) package combines high current heat dissipation capability with a compact footprint. The combination of 40V voltage tolerance, 100A continuous current, and 0.8mΩ on-resistance makes it an ideal choice for high-density power applications such as server power supplies, motor drives, and lithium battery protection, especially suitable for replacing traditional DPAK/TO-252 packages, enhancing power density while effectively reducing system temperature rise.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 40V 3V 180A 1.2(mΩ) 0.8(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 40V 3V 180A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 40V 3V 180A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
- VDS=40V: Suitable for 12V/24V/36V systems, providing ample voltage margin for load transients and parasitic spikes, enhancing avalanche reliability.
- VGS=±20V: Wide gate drive voltage tolerance, compatible with 4.5V/10V logic levels, flexible for use with MCUs, gate drivers, or PMICs.
- Vth=3V (Typical): Moderate threshold voltage, strong noise immunity, ensures deep linear region operation under 10V drive, fully reducing conduction losses.
- RDS(on)=0.8mΩ @ VGS=10V: Industry-leading ultra-low on-resistance, significantly reducing full-load conduction losses, effectively suppressing self-heating in high-current scenarios, and reducing heatsink size.
- ID=100A: Ample continuous drain current margin, meeting demanding load requirements for high-power density converters, high-power BLDC drives, and battery pack active balancing.
- Package DFN8(5X6): Bottom-side thermal pad design, low thermal resistance, low parasitic inductance, supports high-frequency switching, saves PCB area, and optimizes power loop layout.

Domain and module applications:


- Server/Telecom Power Supplies: Used in synchronous rectification and OR-ing circuits, ultra-low on-resistance significantly improves full-load efficiency, reducing data center cooling costs.
- High-Power Motor Drives: In scenarios like drones, power tools, and robot joints, 100A high-current capability and low switching losses match PWM high-frequency control, improving dynamic response and reducing driver temperature rise.
- Lithium Battery Protection and BMS: Low internal resistance in charge/discharge circuits reduces protection board heating; 40V voltage rating supports multi-cell lithium batteries, meeting high-current shutdown requirements during overcurrent/short circuit.
- Electric Vehicle Power Management: Suitable for 12V/24V/36V vehicle buses; DC-DC conversion, load switches, and battery switching circuits can all leverage its low-loss and high thermal reliability advantages.
- High-Power DC-DC Converters: As the main switch in buck/boost topologies, achieving peak efficiency above 98%, supporting further module miniaturization.
- Power Sockets and Industrial Control: Generous SOA and strong avalanche capability adapt to inductive load start/stop, enhancing long-term stability of industrial equipment in harsh electromagnetic environments.

**Selection Summary**: The TPH1R405PL,L1Q-VB achieves an excellent balance between extremely low on-resistance, high-current carrying capacity, and compact DFN8(5X6) packaging. It is a high-performance general-purpose choice for 40V low-voltage, high-power switching applications, especially suitable for projects with strict requirements on efficiency, temperature rise, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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