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SIA443DJ-T1-E3-VB Product details

Product introduction:

SIA443DJ-T1-E3-VB is a Single P-MOS optimized for low-voltage power switching scenarios. The Trench process balances low switching losses and high reliability, while the DFN6(2x2) package strikes a balance between heat dissipation and board space. The combination of -20V voltage resistance, -10A current capacity, and 29mΩ on-resistance makes it an ideal cost-reducing incremental option for replacing traditional SOP-8 or SOT23-3 packaged devices, especially suitable for high-density, high-volume applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2) Single-P -20V -0.8V -10A 40(mΩ) 30(mΩ) 29(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2) Single-P -20V -0.8V -10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2) Single-P -20V -0.8V -10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2) Single-P

VDS=-20V: Suitable for 3.7V/5V/12V systems, provides margin for negative voltage spikes, reduces avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly connect to MCU/PMIC, eliminating level shift circuits.
Vth=-0.8V (Typical): Can enter full conduction region even with low voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=29mΩ @ VGS=-10V (Typical): Ultra-low on-resistance, significantly reduces temperature rise under full load, can reduce heat sink copper area.
RDS(on)=30mΩ @ VGS=-4.5V, 40mΩ @ VGS=-2.5V: Maintains good conduction performance under low voltage drive, compatible with multiple gate drive voltages.
ID=-10A: Ample continuous current margin, can handle peak demands of most portable and automotive auxiliary loads.
Package DFN6(2X2): Small size, low parasitic parameters, supports high-frequency switching, saves PCB area and assembly cost.

Domain and module applications:


Portable Device Power Management: Low internal resistance improves boost/buck efficiency, extends battery life, small package aids ultra-thin design.
Battery Protection Module: Fast response ensures microsecond-level shutdown during overcurrent/short circuit, low internal resistance reduces protection board self-heating.
Low-Voltage Motor Drive: Low PWM switching loss, smoother motor operation, significantly lower controller temperature rise.
Consumer Electronics Control Module: Logic-level direct drive simplifies peripherals, suitable for high-volume, low-cost products like smart sockets and USB switches.
LED Lighting Drive: Low conduction voltage drop reduces constant current source power loss, supports multi-channel parallel, improves overall light efficiency.
DC-DC Converter: Replaces Schottky diodes in synchronous rectification, improving heavy-load efficiency by 2-3%, benefiting module miniaturization.
Automotive Auxiliary Power: Voltage margin and wide operating temperature range (-55~150°C) adapt to 12V vehicle bus, high reliability.
Selection Summary: SIA443DJ-T1-E3-VB achieves a balance between performance margin, package size, and system cost, making it a cost-effective general-purpose choice for -20V low-voltage switching applications, especially suitable for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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