Product introduction：
SISS26LDN-T1-UE3-VB is a high-current, low-loss N-channel power MOSFET, packaged in DFN8(3X3), with a 60V withstand voltage and 30A current carrying capacity. With Trench process technology, the on-resistance is as low as 5mΩ (driven at 10V), resulting in low heat generation and high efficiency. The gate drive is flexible, with a wide range of ±20V, making it suitable for various medium and low voltage power control scenarios.
File download
Domain and module applications：
Motor Drives → High current output, low on-resistance, low temperature rise.
DC-DC Converters → Synchronous rectification, higher efficiency.
Power Adapters and Fast Charging → Sufficient voltage withstand, strong current handling, stable and reliable.
Battery Charge/Discharge Protection → Fast shutdown, extends battery life.
Electric Tools and Small Appliances → Impact resistant, fast response, durable.
Automotive Auxiliary Power Supplies → Vibration resistant, high temperature tolerant, adapts to harsh environments.
Server and Communication Power Supplies → High power density, better heat dissipation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page.png)
