Product introduction:
MCGWF7D2N06YLHE3-TP-VB is a Single N-MOS deeply optimized for low-voltage, high-power switching scenarios. The Trench process combines extremely low conduction losses with high switching speed, and the DFN8(3X3) package achieves an excellent balance between thermal resistance and board space. The combination of 60V withstand voltage, 30A current carrying capacity, and 5mΩ on-resistance makes it an ideal upgrade option to replace traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-efficiency, and high-reliability power systems.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
60V |
|
3V |
30A |
|
|
5(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
60V |
|
3V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
60V |
|
3V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
VDS=60V: Suitable for 12V/24V/36V/48V systems, providing ample headroom for voltage spikes, effectively reducing avalanche breakdown risk.
VGS=±20V: Compatible with 3.3V~12V logic levels, can directly interface with MCU/PMIC, simplifying drive circuit design.
Vth=3V (Typical): Moderate threshold voltage, strong anti-interference capability, ensuring full conduction with 10V drive.
RDS(on)=5mΩ @ VGS=10V: Ultra-low on-resistance, extremely low full-load loss, significantly reducing temperature rise and copper area for heat dissipation.
ID=30A: Ample continuous current margin, capable of handling high-current surge scenarios like motor startup and battery short-circuit protection.
Package DFN8(3X3): Small size, low parasitic inductance, supports high-frequency switching, and features an excellent thermal pad design for enhanced power density.
Domain and module applications:
High-Power DC-DC Converters: Ultra-low on-resistance significantly improves heavy-load efficiency; replacing Schottky in synchronous rectification can reduce losses by 2~3%, benefiting module miniaturization.
Battery Protection and BMS: Milliohm-level on-resistance reduces self-heating of the protection board; 60V withstand voltage meets overvoltage protection needs for multi-cell lithium battery packs; fast response ensures reliable cutoff during overcurrent/short circuit.
Motor Drive and Control: Low PWM switching losses; 30A current capability supports high-power drive for brushed/brushless motors; controller temperature rise is significantly reduced.
Automotive Power Systems: 60V withstand voltage covers 12V/24V automotive electrical buses; wide safe operating area adapts to load dump transients; suitable for automotive DC-DC, electric power steering, etc.
Server and Telecom Power Supplies: Low on-resistance and low thermal resistance package are suitable for high-efficiency rectifier bridges, OR-ing circuits, improving overall system power density and reliability.
Power Tools and Industrial Control: High surge current capability and 30A continuous current suit high-load start-stop scenarios like drills and impact wrenches.
High-Power LED Lighting Drivers: Low voltage drop reduces constant current source power loss; supports high current parallel output; improves overall light efficacy and lifespan. Selection Summary: The MCGWF7D2N06YLHE3-TP-VB achieves an ultra-low on-resistance of 5mΩ and a high current capability of 30A at the 60V voltage rating. Combined with the advanced DFN8(3X3) package, it is a preferred choice for high-performance, high-density power switching applications, especially suitable for power supply, battery, motor, and automotive system projects with strict requirements on efficiency, temperature rise, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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