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SIS4406DN-T1-GE3-VB Product details

Product introduction:

The VBsemi SIS4406DN-T1-GE3-VB is a Single N-Channel MOSFET, part of the VBsemi brand's high-performance power MOSFET product series. Manufactured using advanced Trench technology, this product features extremely low on-resistance and excellent current handling capability, making it suitable for various medium and low-voltage power conversion and switching control applications. The device is housed in a compact DFN8(3×3) package, ensuring good thermal performance while meeting the layout requirements of high-density circuit boards, providing an efficient and reliable solution for power system design.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 40V 2.5V 40A 6(mΩ) 4.5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 40V 2.5V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 40V 2.5V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
- Drain-Source Voltage (VDS): 40V
- Gate-Source Voltage (VGS): ±20V
- Threshold Voltage (Vth): 2.5V
- On-Resistance (VGS=4.5V): 6 mΩ
- On-Resistance (VGS=10V): 4.5 mΩ
- Maximum Drain Current (ID): 40A
- Package Type: DFN8 (3×3)
- Technology Type: Trench

Domain and module applications:


1. **DC-DC Converters**: The SIS4406DN-T1-GE3-VB is suitable for high-efficiency synchronous rectification buck/boost circuits. With an ultra-low 4.5 mΩ on-resistance and 40A high current capability, it significantly improves conversion efficiency, suitable for server power supplies, telecom power modules, etc.

2. **Power Tools and Motor Drives**: This device can serve as a power switch in low-voltage motor drive modules, used for motor control in power tools, drones, robots, etc., supporting high-current transient response for precise speed and torque regulation.

3. **Battery Protection and Management**: In lithium-ion battery charge/discharge protection circuits, this MOSFET can be used for battery pack switch control. Its low on-resistance reduces power loss, and the 40V voltage rating is suitable for multi-cell battery pack applications, ensuring system safety and lifespan.

4. **Load Switches and Power Path Management**: Suitable for power path switching in portable devices and industrial control boards, serving as a load switch for low-power standby and efficient power supply. The compact DFN8 package is ideal for space-constrained board designs.

5. **Automotive Auxiliary Power Systems**: In 12V/24V electrical architectures like automotive infotainment systems and body control modules, this product can be used in power conversion and protection circuits, meeting automotive electronics requirements for reliability and temperature characteristics.

6. **LED Lighting Drives**: Used in low-voltage, high-power LED drive circuits as a constant current switch or PWM dimming control element, ensuring efficient and stable operation of the lighting system, supporting high-power LED arrays.

7. **Power Adapters and Fast Charging Solutions**: In USB PD fast chargers and adapter secondary-side synchronous rectification circuits, this MOSFET can replace traditional Schottky diodes, reducing rectification losses and improving overall charger efficiency and power density.

The VBsemi SIS4406DN-T1-GE3-VB, with its low on-resistance, high current capability, and compact package, is an ideal choice for medium and low-voltage power conversion and switching control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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