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TPN2R304PL,L1Q-VB Product details

Product introduction:

TPN2R304PL,L1Q-VB is a Single N-MOS deeply optimized for low voltage, high power switching scenarios. The Trench technology achieves an excellent balance between low on-resistance and fast switching capability. The DFN8(3X3) package combines excellent heat dissipation with a compact footprint. The combination of 40V withstand voltage, 60A continuous current capability, and 2mΩ-level on-resistance makes it an ideal choice for high-density power conversion applications such as server power supplies, power tools, and automotive electronics, effectively replacing traditional DPAK or SOP-8 package devices to reduce system losses and increase power density.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 40V 3V 60A 3(mΩ) 2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 40V 3V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 40V 3V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
VDS=40V: Suitable for 12V/24V/36V systems, providing ample headroom for voltage spikes, reducing avalanche breakdown risk, and enhancing system reliability.
VGS=±20V: Compatible with 4.5V~12V logic levels, can be directly driven by MCU/PMIC or a driver, simplifying gate drive design.
Vth=3V (typical): Moderate threshold voltage, strong anti-interference capability, ensures full conduction under 4.5V low-voltage drive, suitable for a wide range of control voltages.
RDS(on)=2mΩ @ VGS=10V / 3mΩ @ VGS=4.5V: Ultra-low on-resistance, extremely low conduction losses at full load, significantly reduces temperature rise, can reduce heat sink copper area and heatsink requirements.
ID=60A: Ample continuous current capability, can handle peak current scenarios like motor startup and short circuits, suitable for high-power loads.
Package DFN8(3X3): Small size, low parasitic inductance, supports high-frequency switching, while bottom pad enhances heat dissipation, beneficial for high-power-density design.

Domain and module applications:


DC-DC Converters: Replacing Schottky diodes in synchronous rectification applications can improve heavy-load efficiency by 2~4%, especially suitable for 12V input, high current output modules.
Power Tools and Motor Drives: 60A high current capability supports high torque output; low on-resistance reduces controller heat generation; low PWM switching losses result in smoother motor operation.
Battery Protection and BMS: Microsecond switching response ensures fast shutdown during overcurrent/short circuit; 2mΩ internal resistance significantly reduces protection board self-heating, extending battery life.
Automotive Auxiliary Power and Light Drivers: 40V voltage margin adapts to 12V/24V vehicle buses; wide operating temperature range combined with low conduction losses supports high-reliability automotive applications.
Server and Telecom Power Supplies: DFN8(3X3) small package combined with low thermal resistance is suitable for power stages like synchronous rectification and hot swap on high-density boards.
Smart Home and Industrial Control: Strong compatibility with logic level drive, can directly connect to control chips, suitable for mass production applications like smart circuit breakers, power switches, and industrial valve drives.
LED High Power Lighting Drivers: Low conduction voltage drop reduces constant current source power consumption; supports high current parallel connection, improving overall light efficiency and thermal performance. Selection Summary: The TPN2R304PL,L1Q-VB achieves 2mΩ level ultra-low on-resistance and 60A high current capability at 40V voltage rating, combined with a DFN8(3X3) small package, providing an optimal solution with high performance, high reliability, and high power density for low-voltage high-power switching applications, especially suitable for projects with strict requirements on loss, temperature rise, and space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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