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PSMN3R5-30LL,115-VB Product details

Product introduction:

PSMN3R5-30LL,115-VB is a Single N-MOS deeply optimized for low-voltage high-current power switching scenarios. Using Trench technology, it combines extremely low on-resistance with fast switching characteristics. The DFN8(3X3) package achieves an excellent balance between thermal performance and board space. With 30V withstand voltage, 60A continuous current capability, and 3.9mΩ on-resistance, it is an ideal choice for high-density power modules, battery protection, and motor drive applications, especially suitable for systems with strict efficiency and temperature rise requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 60A 5(mΩ) 3.9(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N

VDS=30V: Suitable for 5V/12V/24V low-voltage systems, providing ample voltage spike margin to reduce avalanche breakdown risk.
VGS=±20V: Compatible with multiple logic level drives, can be directly connected to MCU/PMIC, simplifying peripheral level-shifting circuits.
Vth=1.7V (Typical): Can enter the fully enhanced region under low-voltage drive, suitable for applications like battery voltage droop.
RDS(on)=3.9mΩ @ VGS=10V, 5mΩ @ VGS=4.5V: Ultra-low on-resistance significantly reduces conduction loss and full-load temperature rise, allowing for reduced thermal design margin.
ID=60A: Ample continuous current capability meets peak demands of high-power loads, offering excellent overcurrent withstand capability.
Package DFN8(3X3): Small size, low parasitic inductance, supports high-frequency switching, while optimizing PCB space utilization and assembly cost.

Domain and module applications:


DC-DC Converters: Replacing Schottky diodes in synchronous rectification applications can improve heavy-load efficiency by 2~3%, aiding module miniaturization.
Battery Protection Modules: Extremely low internal resistance reduces heat generation on the protection board, and fast switching characteristics ensure reliable shutdown during overcurrent/short circuit.
Low-voltage Motor Drives: Low PWM switching losses result in smoother motor operation and significantly lower controller temperature rise.
Server/Communication Power Supplies: High current carrying capacity and low conduction losses match the requirements of high power density designs.
Portable Device Power Management: Improves buck-boost conversion efficiency, extends battery life, and the small package supports ultra-thin structures.
Automotive Auxiliary Power: 30V voltage rating margin and wide operating temperature range are suitable for 12V automotive buses, offering high reliability.
Power Tools and Industrial Control: 60A high-current capability can handle impact conditions like stall, improving system robustness. Selection Summary: PSMN3R5-30LL,115-VB achieves an excellent balance between ultra-low on-resistance, high current carrying capacity, and compact DFN8(3X3) packaging. It is a high-performance general-purpose choice for 30V low-voltage high-current switching applications, especially suitable for projects with strict requirements on efficiency, temperature rise, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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