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DMN2002UFG-13-VB Product details

Product introduction:

DMN2002UFG-13-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching scenarios. The Trench process combines ultra-low on-resistance with fast switching capability, while the DFN8(3X3) package achieves an excellent balance between thermal performance and board space. The combination of 20V withstand voltage, 100A current capacity, and 2mΩ-level on-resistance makes it an ideal choice for high-density power modules, battery protection, and power tools, especially for applications with strict efficiency and temperature rise requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 20V 0.6V 100A 2.5(mΩ) 2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 20V 0.6V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 20V 0.6V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N

VDS=20V: Suitable for 5V/12V low-voltage systems, providing ample margin for switching node spikes to enhance circuit reliability.
VGS=±12V: Compatible with 2.5V~10V logic level drive, can directly connect to MCU/PMIC or dedicated gate driver, simplifying peripheral design.
Vth=0.6V (Typical): Low threshold voltage ensures fast entry into full conduction region under low-voltage drive, supporting stable operation under battery voltage decay conditions.
RDS(on)=2mΩ @ VGS=10V: Extremely low on-resistance minimizes conduction loss at full load, significantly reducing device temperature rise and required heat sink copper area.
RDS(on)=2.5mΩ @ VGS=4.5V: Maintains ultra-low impedance even under lower gate drive, suitable for high-current scenarios with direct 3.3V/5V logic drive.
ID=100A: Ample continuous current capability to handle transient high-current surges such as motor stall or battery short-circuit protection.
Package DFN8(3X3): Low parasitic inductance and thermal resistance, supporting high-frequency switching while saving PCB space and optimizing power loop design.
Technology Trench: Deep trench structure achieves lower on-resistance per unit area, balancing switching loss and EMI performance.

Domain and module applications:


Battery Protection Module: 100A high current carrying capacity combined with low internal resistance reduces self-heating of the protection board, adapting to high-rate charge/discharge requirements.
Power Tools and Garden Machinery: Ultra-low on-resistance reduces voltage drop and temperature rise during high-power output, extending continuous working time.
Low-Voltage Motor Drive: Low PWM switching losses result in smoother motor operation and significantly lower controller thermal stress.
DC-DC Converters and Synchronous Rectification: Replacing Schottky diodes in 5V/12V systems can improve heavy-load efficiency by 2~3%, facilitating power module miniaturization.
Portable Device Power Management: Small package and low internal resistance aid ultra-thin designs, improving buck-boost conversion efficiency and extending battery life.
Automotive Auxiliary Power Supply: 20V withstand voltage combined with high current capability, suitable for high-reliability switching applications under 12V vehicle bus.
Server/Communication Board Power Supplies: DFN8(3X3) package meets high-density layout requirements, and low on-resistance reduces heat dissipation burden in server rooms. Selection Summary: DMN2002UFG-13-VB achieves an excellent balance between ultra-low on-resistance, high current carrying capacity, and compact package, making it a high-performance general-purpose choice for 20V low-voltage, high-current switching applications, especially suitable for projects with strict requirements on power density, efficiency, and thermal management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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