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SISS5708DN-T1-BE3-VB Product details

Product introduction:

SISS5708DN-T1-BE3-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. The Trench process balances low switching loss and high reliability, while the DFN8(3X3) package achieves a balance between heat dissipation and board space. The combination of 150V withstand voltage, 25.5A current capacity, and 35mΩ on-resistance makes it an ideal cost-reducing incremental option for replacing traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-volume applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 150V 3V 25.5A 35(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 150V 3V 25.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 150V 3V 25.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N

VDS=150V: Suitable for 48V/72V/110V systems, providing ample margin for voltage spikes to reduce avalanche breakdown risk.
VGS=±20V: Compatible with 10V~12V logic levels, can directly connect to gate driver IC, simplifying drive circuit design.
Vth=3V (Typical): Fully conducts under higher gate drive voltage, suitable for stable drive scenarios in industrial and automotive power supplies.
RDS(on)=35mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces temperature rise at full load, minimizing required heat sink copper area.
ID=25.5A: Ample continuous current margin to handle peak demands of most industrial and automotive auxiliary loads.
Package DFN8(3X3): Small size, low parasitic parameters, supports high-frequency switching while saving PCB space and assembly cost.

Domain and module applications:


Industrial Power Conversion: High withstand voltage and low on-resistance improve DC-DC conversion efficiency, reducing heatsink size.
Motor Drive Control: Low PWM switching losses result in smoother motor operation and significantly lower controller temperature rise.
Battery Protection Module: Fast response characteristics ensure microsecond-level shutdown during overcurrent/short circuit, and low internal resistance reduces self-heating of the protection board.
Automotive Auxiliary Power Supply: Voltage margin and wide operating temperature range adapt to 24V/48V vehicle bus, with high reliability.
Communication Base Station Power Supply: 150V withstand voltage combined with low conduction loss, suitable for intermediate bus conversion and point-of-load power supplies.
LED Lighting Driver: Low conduction voltage drop reduces constant current source power consumption, supports multi-channel parallel connection, improving overall luminaire efficacy.
DC-DC Converter: Replacing Schottky diodes in synchronous rectification can improve heavy-load efficiency by 2~3%, facilitating module miniaturization. Selection Summary: SISS5708DN-T1-BE3-VB achieves a balance between performance margin, package size, and system cost, making it a cost-effective general-purpose choice for 150V high-voltage switching applications, especially suitable for projects with strict space and thermal dissipation requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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